Nichia Corporation

Shinko Electric Industries Co., Ltd.

Eiichiro Okahisa

Kazuma Kozuru

Seiji Kiyota

Takuya Hashimoto

Shigeru Matsushita

Katsuya Nakazawa

Sumio Uehara

Kazuhito Yumoto

Suguru Kobayashi

Shohei Itonaga

Soichiro Miura

Hiroaki Yuto

Seiji Nagahara

Hiroki Sakata

Masatoshi Nakagaki

Takashi Sasamuro

Takeshi Imai

Toshiya Igata

Mikio Suyama

Makoto Kubota

A laser package includes: a substrate having an upper surface; a first laser element disposed on the substrate and configured to emit light in a first direction; a first optical member having a lower surface bonded to the upper surface of the substrate, a reflecting surface inclined relative to the lower surface and configured to reflect the light, and an upper surface connected to the reflecting surface, the upper surface of the first optical member being located farther in the first direction than the reflecting surface; and a bonding material disposed on the upper surface of the substrate. The first optical member is bonded to the substrate via the bonding material. In a top view, a portion of the bonding material protrudes from three sides of the upper surface of the first optical member.

Method for manufacturing laser package

A light-emitting device includes: a substrate including a base and a side wall; a plurality of semiconductor laser elements arrayed in a first direction on an upper surface of the base; a sealing member fixed to the substrate, wherein the sealing member and the substrate define a sealed space in which the semiconductor laser element is located; and a lens array disposed above the sealing member, the lens array including a plurality of lens sections arrayed in the first direction. In the lens array, a maximum outer diameter of each lens sections is 1.25 times or more than an inter-vertex distance between adjacent ones of the lens sections in the first direction.

Light-emitting device

A light emitting device includes: a base having a mounting face including a disposition region, a plurality of first wirings, and a plurality of second wirings; a plurality of light emitting elements, including one or more first light emitting elements, one or more second light emitting elements, and one or more third light emitting elements, disposed in two rows and N columns (N≥2) in the disposition region; one or more relay members, including one or more first relay members disposed in the region between the two rows of the light emitting elements; a plurality of first light emitting element wirings for electrically serially connecting the one or more first light emitting elements; a plurality of second light emitting element wirings for electrically serially connecting the one or more second light emitting elements; and a plurality of third light emitting element wirings for electrically serially connecting the one or more third light emitting elements. The first light emitting element wirings include wirings that are connected with the one or more first relay members.

Light emitting device

A method of manufacturing a semiconductor device includes: preparing a bottom plate having an upper surface and a lower surface, wherein the lower surface of the bottom plate comprises a reference part and one or more inclined surfaces that are inclined with respect to the reference part, an upper portion of the one or more inclined surfaces being positioned above the reference part, and wherein a thickness of the bottom plate at the reference part is greater than a thickness of the bottom plate at the upper portion of the one or more inclined surfaces; joining a frame member to the bottom plate, at least a part of the frame member being disposed directly above the one or more inclined surfaces, a linear expansion coefficient of the frame member being smaller than a linear expansion coefficient of the bottom plate; and fixing a semiconductor element to the bottom plate.

Semiconductor device, semiconductor device package, and manufacturing methods thereof

A semiconductor device includes: a package including: a heat dissipating body comprising a metal, an insulting part surrounding the heat dissipating body, one or more semiconductor laser elements disposed on the heat dissipating body, at least one outer metal layer that is located on a lower surface of the insulting part and is spaced from a lower surface of the heat dissipating body; a mounting substrate including: at least one first metal pattern located at an upper surface of the mounting substrate, and a second metal pattern located at the upper surface of the mounting substrate; at least one first bonding member located between the at least one outer metal layer and the first metal pattern; and a second bonding member located between the lower surface of the heat dissipating body and the second metal pattern, wherein the second bonding member comprises a metal material.

Semiconductor device and method of manufacturing the semiconductor device

A method of manufacturing a light-emitting device includes providing a base body including a base section; fixing a plurality of semiconductor laser elements on an upper surface of the base section; and fixing an optical member to the base body, the optical member including a plurality of lens sections, and a non-lens section disposed at a periphery of the plurality of lens sections in a top view. In the step of fixing the optical member: the optical member is arranged above the base body; (i) an inclination and a height of the optical member are adjusted after interposing an adhesive between the base body and the non-lens section, or (ii) an adhesive is interposed between the base body and the non-lens section after adjusting the inclination and the height of the optical member; and subsequently, the adhesive is cured to fix the optical member to the base body.

Manufacturing method of light-emitting device

A semiconductor device includes: a bottom plate having an upper surface and a lower surface, wherein the upper surface comprises an outer peripheral part and an inside part that is enclosed by the outer peripheral part and that protrudes more upward than the outer peripheral part; a frame joined to the upper surface of the bottom plate and comprising a first through-hole that penetrates the frame; a plate jointed to the outside or inside surface of the frame, the plate comprising a second through-hole that penetrates the plate in a same direction as that of the first through-hole, a thickness of the plate being greater than a thickness of the frame; a lead terminal inserted into the first through-hole and the second through-hole; a fixing member provided in the second through-hole and fixing the lead terminal; and a semiconductor element fixed to the inside part.

A light-emitting device includes: a substrate comprising a base; a semiconductor laser element disposed on an upper surface of the base; a sealing member located above the base and fixed to the substrate, wherein the sealing member and the substrate define a sealed space in which the semiconductor laser element is located; and a lens member fixed to the sealing member by adhesive, the lens member comprising a lens section through which light emitted from the semiconductor laser element passes. A space between the sealing member and the lens member is open to an area outside the light-emitting device.

A semiconductor device includes: a package including: a lower surface, at least one first metal surface at an outer periphery of the lower surface, and at least one second metal surface at the lower surface at a location different from the at least one first metal surface; a mounting substrate disposed below the package and including: an upper surface, at least one first metal pattern disposed at the upper surface below the at least one first metal surface, and at least one second metal pattern disposed at the upper surface below the at least one second metal surface; a first bonding member containing a metal material and bonding the at least one first metal surface and the at least one first metal pattern; and a second bonding member containing a metal material and bonding the at least one second metal surface and the at least one second metal pattern.

A light-emitting device includes: a substrate including a base and a side wall; a plurality of semiconductor laser elements disposed in a row direction and in a column direction on an upper surface of the base; a plurality of pairs of wires that penetrate the side wall in the row direction; and a lens array fixed to the substrate, the lens array comprising a plurality of lens sections disposed in the row direction and in the column direction above the plurality of semiconductor laser elements. Each laser beam that is emitted from the semiconductor laser elements and is incident on a light incident surface of the lens array has a beam shape with a greater width in the column direction than in the row direction.

A light emitting device includes: a base including: a main body, and a frame disposed on an upper surface of the main body; one or more laser elements disposed on the upper surface of the main body and positioned inward of the frame; and a cover including: a support member that is fixed to an upper surface of the frame and that has an opening inside the frame, and a light transmissive portion that is fixed to the support member and that is disposed so as to close the opening. A first interface, between the light transmissive portion and the support member, is located inward of and lower than a second interface, between the support member and the frame. A portion of the support member that extends at least from an outermost end of the first interface to an innermost end of the second interface has a constant thickness.

A light-emitting device includes a substrate; a lens array having a plurality of lens sections in a matrix pattern; and a plurality of semiconductor laser elements disposed on the substrate. Each of the semiconductor laser elements emits a respective laser beam, each laser beam having a beam shape with a greater width in a column direction than in a row direction on a light incident surface of each respective lens section. The lens sections have an inter-vertex distance in the row direction that is smaller than both (i) a maximum outer diameter of each of the lens sections, and (ii) an inter-vertex distance in the column direction. A curvature of the lens sections in the row direction is the same as a curvature of the lens sections in the column direction.

A method of manufacturing a semiconductor device includes: providing a package; providing a mounting substrate; providing at least one first bonding member disposed at a position connecting at least one first metal surface of the package and at least one first metal pattern of the mounting substrate; providing a second bonding member connecting at least one second metal surface of the package and at least one second metal pattern of the mounting substrate; and heating the at least one first bonding member and the at least one second bonding member at a temperature equal to or higher than both a bonding temperature of the at least one first bonding member and a bonding temperature of the at least one second bonding member, to bond the package and the mounting substrate together.

A light emitting device includes: a base including: a main body, and a frame disposed on an upper surface of the main body; one or more laser elements disposed on the upper surface of the main body and positioned inward of the frame; a cover including: a support member that is fixed on an upper surface of the frame and has an opening inside the frame, and a light transmissive portion disposed so as to close the opening; and a lens body disposed on the support member and above the light transmissive portion. A difference between a thermal expansion coefficient of the light transmissive portion and a thermal expansion coefficient of the lens body is smaller than a difference between a thermal expansion coefficient of the light transmissive portion and a thermal expansion coefficient of the main body.

Growing community of inventors

Tokushima, Japan

Eiichiro Okahisa