Okamoto Machine Tool Works, Ltd.

Eiichi Yamamoto

Takahiko Mitsui

Tsubasa Bando

Satoru Ide

Kazuo Kobayashi

Moriyuki Kashiwa

Tomio Kubo

Yoshihiro Terakubo

Toshihiro Ito

Hiroaki Kida

Noriyuki Motimaru

There is provided a method for manufacturing a semiconductor device, including: attracting a semiconductor device wafer by a chuck mechanism and rotating the semiconductor device wafer horizontally; rotating a rotary blade horizontally by a vertical spindle to which ultrasonic waves are applied; trimming an outer peripheral end portion of the semiconductor device wafer that is horizontally rotating by the rotary blade that is horizontally rotating, to form a groove in the outer peripheral end portion; correcting a tip shape of the rotary blade that is horizontally rotating by a blade-forming grinding wheel during the trimming; and grinding one main surface of the semiconductor device wafer that is horizontally rotating by a cup grinding wheel that is horizontally rotating after the trimming.

Method for manufacturing semiconductor device and apparatus for manufacturing semiconductor device

A dressing apparatus includes a dresser provided in a polishing apparatus for polishing a board-like work by relative movement between the work and a polishing pad while bringing the polishing pad into contact with the work, the dresser having a dressing surface that slides relative to a polishing surface of the polishing pad to dress the polishing pad; a dresser drive member that rotates the dresser; a high-pressure water generating device that supplies high-pressure water pressurized to 1 to 15 MPa; and a high-pressure water injection nozzle that injects the high-pressure water toward the dressing surface rotating.

Dressing apparatus and polishing apparatus

A grinding apparatus and a grinding method of a composite substrate including resin, by which loading of a grinding wheel can be suppressed in grinding of a large-sized composite substrate including resin, and with which grinding can be effectively performed with high precision. This method for grinding a front surface of a composite substrate formed with a resin substrate embedded with at least one of a semiconductor device chip and an electrode, includes: bringing at least a part of a grinding member for grinding the front surface of the composite substrate into contact with the front surface; supplying water to at least one of a contacting part or a non-contacting part between the front surface of the composite substrate and the grinding member; and grinding the front surface of the composite substrate simultaneously with the supplying water.

Grinding method of composite substrate including resin and grinding apparatus thereof

A method for manufacturing a semiconductor device includes chucking in which a semiconductor device wafer is attached to an upper surface of a chuck mechanism with its device surface down; and edge trimming performed after the chucking, wherein the edge trimming comprises: rotating the semiconductor device water horizontally by the chuck mechanism; rotating a rotating blade horizontally by a vertical spindle to which an ultrasonic wave is applied and trimming a circumferential side surface of the semiconductor device wafer by the rotating blade.

Method and apparatus for manufacturing semiconductor device

An electrostatic attachment chuck includes: a substrate; a synthetic resin sheet joined to one main surface of the substrate; and at least a pair of electrodes disposed in the synthetic resin sheet. The synthetic resin sheet includes a planarized and ground surface serving as a surface on which a semiconductor wafer is abutted.

Electrostatic attachment chuck, method for manufacturing the same, and semiconductor device manufacturing method

An embodiment of the present disclosure provides a method of manufacturing a semiconductor apparatus, including the following steps. A) forming a semiconductor device element in a Si active layer of an insulating isolation Si substrate including the Si active layer, a buried insulating layer, and a Si supporting substrate arranged in this order; B) forming a plurality of through electrode holes penetrating the Si active layer and the buried insulating layer to reach a partial region of the Si supporting substrate in an element region layer including the formed semiconductor device element; C) forming a through silicon via by sequentially forming an insulating film, a barrier film, and a Cu film inside the through electrode hole to completely fill the through electrode hole; D) forming a multilayer wiring layer including a wiring layer connected to the semiconductor device element on an outer surface of the element region layer in which the through silicon via is formed; and E) exposing the Cu film of the through silicon via by removing the Si supporting substrate after forming the multilayer wiring layer.

Method of manufacturing semiconductor apparatus

A planarization apparatus and method that thins and planarizes a substrate by grinding and polishing the rear surface of the substrate with high throughput, and that fabricates a semiconductor substrate with reduced adhered contaminants. A planarization apparatus that houses various mechanism elements in semiconductor substrate loading/unloading stage chamber, a rear-surface polishing stage chamber, and a rear-surface grinding stage chamber. The throughput time of the rear-surface polishing stage that simultaneously polishes two substrates is typically about double the throughput time of the rear-surface grinding stage that grinds one substrate.

Growing community of inventors

Gunma, Japan

Eiichi Yamamoto