Toshiba Ceramics Co., Ltd.

Other

Tokyo Electron Limited

Toshiba Kikai Co., Ltd.

Eiichi Toya

Tomio Konn

Takanori Saito

Tomohiro Nagata

Ken Nakao

Norihiko Saito

Yasumi Sasaki

Toshiyuki Makiya

Hisaei Osanai

Sunao Seko

Tadashi Ohashi

Takashi Tanaka

Kazutoshi Miura

Harunari Hasegawa

Hiroyuki Honma

Takeshi Inaba

Masahiko Ichishima

Shigeru Yamamura

Yukio Itoh

George Hoshi

Masayuki Sumiya

Akira Otsu

Katsutoshi Ishi

Hiroshi Mori

Shinichi Mitani

Katsutoshi Ishii

Jun Yoshikawa

Takaaki Honda

Hideo Nakanishi

Kazunori Meguro

Yoshiyuki Watanabe

Masaki Shimada

Shigeo Kato

Hideyuki Yokoyama

Kazuo Itoh

Hiraku Yamazaki

Atsuo Kitazawa

Teruo Sugai

Haruo Tazoe

Yutaka Ishizuka

Tatsuo Nozawa

Masayuki Ohkawa

Masatoshi Kasahara

Ritsurou Makita

Hiroaki Koike

Shirou Hotate

Shinichi Inoue

Masaru Seino

Joji Hoshi

Kouji Teraoka

A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2&#xd7;10g/cmor less.

Carbon wire heating object sealing heater and fluid heating apparatus using the same heater

A steam generating apparatus includes: a liquid tank portionfor storing a liquid; an evaporator portionwhich is directly connected to the liquid tank portion, heats the liquid supplied from the liquid tank portion, and generates steam; a steam storage portionwhich is directly connected to the evaporator portion, and stores the steam generated by the evaporator portion; a passagewaywhich is directly connected to the steam storage portion and outwardly passes the generated steam; a liquid pathwaywhich is connected to the liquid tank portion, and supplies the liquid; and a heater unitwhich is provided on one side of the evaporator portion, and heats at least the evaporator portion. The liquid tank portion, the evaporator portion, the steam storage portion, the passageway, and the liquid pathwayare formed within an integral member of a translucent material.

Steam generator and mixer using the same

The fluid heating apparatus, in accordance with the present invention, developed to solve the technological problems described above is characterized by comprising at least a heating tube heating fluid to be supplied from fluid supply source, a heater section spirally formed on an outer periphery of the heating tube and a housing accommodating the heating tube and the heater section, wherein the heater section comprises a carbon wire heating element and a quartz glass tube in which the carbon wire heating element is enclosed.

Fluid heating apparatus

A rod-shaped heater provided is composed of a carbon wire heating element sealed in a small or large diameter quartz glass tube, a small diameter quartz glass tube portions and charged with compressed wire carbon members at opposite ends thereof; a sealed terminal section having connection lines and for power supply held between the compressed wire carbon members charged in the small diameter quartz glass tube. The connection lines and the carbon wire heating element are electrically connected by way of the wire carbon members. This rod-shaped heater using the carbon wire heating element is suitable for readily raising the temperature of the agent in the storage tank of the wet etching agent or the grinding agent.

Heater

A sealing terminal includes internal connection lines which are connected to heating elements and external connection lines via which power is supplied. A quartz glass body includes a plurality of grooves in its outer surface to retain the internal and external connection lines in place. Conductive foils are used to connect the internal and external lines which are housed in a quartz glass tube so that the ends of the lines project out of the respective ends thereof. A plug is disposed in the lower end of the tube to close the same. Spark generation is prevented while a low electrical resistance sealed terminal which is simple in structure and quick and easy to assemble, results.

Sealing terminal

A carbon heater comprising heater members (11, 111, 121 . . . 161, 212, 222, 315, 325 . . . 345, 411, 515, 612) in which a plurality of carbon fiber bundles having a plurality of carbon fibers whose diameter is 5 to 15 .mu.m bundled are woven into a longitudinally elongated shape such as a wire shape or a tape shape and the impurity content is less than 10 ppm in ashes.

Carbon heater

A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.

Vapor phase growth apparatus

End members are located at the top and the bottom of a vertical heat treatment device. A plurality of support members are vertically mounted on the end members. A plurality of wafer hold members are fixed on the support members in a parallel manner, each of which is formed in an approximately circular arc shape. The wafer hold member is made of SiC by a CVD method or Si3N4 by a CVD method. The wafer hold member has a plate portion on which a wafer is to be placed and a reinforce portion connected to the plate portion. The plate portion is 100-1000 microns in thickness.

Vertical heat treatment device for semiconductor

A vertical boat for holding a plurality of semiconductor wafers comprising two end members (2) positioned at the top and the bottom of the vertical boat, and a plurality of support members (3,4,5,6,104) vertically mounted on the end members (2) for supporting the wafers, wherein each support member (3,4,5,6,104) is formed by a plate-like member having a series of slits (9,10,7,8,108) formed thereon in such a manner that a plurality of support arms are defined by the slits (9,10,7,8,108) at a predetermined interval, each support arm having a support projection (11,12,13,14,112) formed at the end thereof, and wherein the inner portions (P) of the wafer (1) is to be supported by the support projections (11,12,13,14,112) whereas the periphery of the wafer (1) does not contact the arms of the support members (3,4,5,6,104). The slits can be formed in two steps: forming a series of first slit portions on the plate-like member at a predetermined interval so as to retain two side walls of the plate-like member; and forming a series of second small slit portions on one of the side walls at the same interval so as to connect each second slit portion to the corresponding first slit portion.

Vertical boat and a method for making the same

A ceramic device is disclosed that has a silicon base plate, a first ceramic film formed on a first surface of the silicon base plate, a second ceramic film formed on a second surface of the silicon base plate opposite to the first surface, and an operation opening formed in the silicon base plate between the first and second surfaces. A surface portion of the first ceramic film exposed to the operation opening Is a mirror surface having 0.05 micrometers or less of center line average height Ra. A mirror surface keeping film can be formed between the first surface of the silicon base plate and the first ceramic film for keeping a mirror surface in an etching step to etch the silicon base plate, and the silicon base plate can be reduced partially in the etching step for forming an operation opening thereby exposing a corresponding portion of the mirror surface keeping film to the operation opening.

Ceramic device

A mirror for SOR includes a base (1) made of a heat resistant ceramic material having a surface, a first SiC coating (2, 3) formed on the surface of the base (1), which has a first smoothed surface, and a second SiC coating (4, 5) formed on the first smoothed surface of the first SiC coating (2, 3), which has a second smoothed surface. A third SiC coating can be formed on the smoothed surface of the second SiC coating (4).

Mirror for SOR

A disc-shaped electrode plate body is made of high-purity glassy carbon and has a large number of very-small-diameter through holes each of which has a plurality of spherical recesses in its internal wall surface.

Electrode plate for plasma etching

The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of the main body is made of crystal particles having a diameter of 5 .mu.m or more. The main body has a thickness of, for example, 700 .mu.m. Six susceptors are attached to a hexagonal upper plate which is fastened to a shaft, and also to a hexagonal lower plate, thereby forming a barrel. Silicon wafers are placed in the circular depressions, so that single-crystal layers may be epitaxially formed on the wafers.

Susceptor for vapor-growth deposition

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Nishiokitama-gun, Japan

Eiichi Toya