Canon Kabushiki Kaisha

Eiichi Takami

Noriyuki Kaifu

Tadao Endo

Chiori Mochizuki

Masakazu Morishita

Shinichi Takeda

Toshikazu Tamura

Akira Tago

Akira Funakoshi

Shinichi Hayashi

Kenji Kajiwara

Minoru Watanabe

Takeaki Itsuji

Akihiko Yushiya

Satoshi Okada

Masahiro Kobayashi

Kiyofumi Sakaguchi

Kazuaki Tashiro

Isao Kobayashi

Takahiro Sato

Jun Iba

Yasushi Koyama

Toshifumi Yoshioka

Rei Kurashima

Chido Yokokawa

A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Processing system

A system includes a first transmission unit configure to emit a first terahertz wave, a second transmission unit disposed at a position different from a position of the first transmission unit and configured to emit a second terahertz wave, a detection unit for detecting at least one of a first reflected terahertz wave that is a part of the first terahertz wave reflected from an object, or a second reflected terahertz wave that is a part of the second terahertz wave reflected from the object, and outputting image data based on the detected terahertz wave, and a first control unit configured to, under a condition set based on the image data, control at least one of an operation of the first transmission unit or an operation of the second transmission unit.

Terahertz wave camera system and method for controlling terahertz wave camera system

A detector includes a semiconductor layer included in a detection region and a peripheral region, and having a first surface and a second surface opposite to the first surface, and a wiring structure included in at least the detection region, and disposed between a space on the first surface side with respect to the semiconductor layer and a space on the second surface side with respect to the semiconductor layer, wherein a thickness of the semiconductor layer in at least a part of the detection region is smaller than a thickness of the peripheral region including the semiconductor layer, and the thickness of the semiconductor layer is larger than a distance between the first surface in the detection region and the space on the first surface side, and a distance between the second surface in the detection region and the space on the second surface side.

Energy ray detector, detection apparatus, and equipment

For providing a photoelectric conversion device that can prevent radiation noise by a low-cost and simple mounting method, the photoelectric conversion device having a photoelectric conversion element is provided in which a conductive member such as a thin metal sheet is stuck on the photoelectric conversion element.

Photoelectric conversion device for reducing radiation noise on large screen sensors

In case of reading a black-and-white original, the LEDs of R (red), G (green) and B (blue) colors are maintained at turn-on duty ratios same as those at the color image reading, and are turned on simultaneously or in succession, with the turn-on period reduced to &#x2153;, whereby the forward current of each of the R, G, and B LEDs is maintained same in the color image reading mode and in the black-and-white image reading mode. Thus, in case of reading the black-and-white original with the light source-switched color image sensor, the current adjusting means for adapting to such reading modes can be dispensed with in the light emitting elements for illuminating the original image, and the service life of the device can be extended with the simple configuration.

Image reading system

A radiation image pickup device comprises an image pickup element for converting radiation into an electric signal and picking up an image of an object, a circuit substrate electrically connected to the image pickup element and provided with at least either a circuit for controlling the input signal to the image pickup element or a circuit for processing the output signal from the image pickup element, active elements arranged on the circuit substrate and constituting the circuit and radiation shielding members for shielding the active elements from radiation, the radiation shielding members having a surface area smaller than that of the circuit substrate.

Radiation image pickup device and system

In case of reading a black-and-white original, the LEDs of R (red), G (green) and B (blue) colors are maintained at turn-on duty ratios same as those at the color image reading, and are turned on simultaneously or in succession, with the turn-on period reduced to &frac13;, whereby the forward current of each of the R, G, and B LEDs is maintained same in the color image reading mode and in the black-and-white image reading mode. Thus, in case of reading the black-and-white original with the light source-switched color image sensor, the current adjusting means for adapting to such reading modes can be dispensed with in the light emitting elements for illuminating the original image, and the service life of the device can be extended with the simple configuration.

Photoelectric conversion device having photoelectric conversion elements

In a photoelectric conversion apparatus obtained by arranging and fixing a plurality of semiconductor element substrates onto a base with an adhesive, the levels of the upper surfaces of the substrates are adjusted with a desired thickness of the adhesive so as to set the upper surfaces within the same plane while the distance from the upper surface of the base to the semiconductor element surface of each substrate is kept to a design value, thereby realizing a photoelectric conversion apparatus constituted by a plurality of substrates arranged two-dimensionally, which eliminates level gaps between the substrates, and hence is free from problems such as a decrease in resolution, a deterioration in sensitivity, and peeling of a phosphor and the like.

Photoelectric conversion apparatus and method of manufacturing the same

In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

Photoelectric conversion device

Photoelectric conversion device having flexible cable fixed to chassis

In a photoelectric conversion apparatus obtained by arranging and fixing a plurality of semiconductor element substrates onto a base with an adhesive, the levels of the upper surfaces of the substrates are adjusted with a desired thickness of the adhesive so as to set the upper surfaces within the same plane while the distance from the upper surface of the base to the semiconductor element surface of each substrate is kept to a design value, thereby realizing a photoelectric conversion apparatus constituted by a plurality of substrates arranged two-dimensionally, which eliminates level gaps between the substrate, and hence is free from problems such as a decrease in resolution, a deterioration in sensitivity, and peeling of a phosphor and the like.

Growing community of inventors

Kanagawa-ken, Japan

Eiichi Takami