Toshiba Memory Corporation

Eiichi Soda

Kazuhiro Takahata

A method of an embodiment separates a bonded substrate including first and second substrates. The bonded substrate includes a carbon film on a first surface of the first substrate, a memory cell on the carbon film, a first connection terminal on the memory cell, a transistor on a first surface of the second substrate, and a second connection terminal on the transistor. In opposing direction of the first surfaces of the first and second substrates, a side of the first substrate on which the memory cell is located and a side of the second substrate on which the transistor is located are joined together, and the first and second connection terminals are mutually connected. The method includes removing the carbon film, and separating the bonded substrate into the first substrate with the first surface exposed and the second substrate on which the memory cell and the transistor are located.

Method of separating bonded substrate, method of manufacturing semiconductor storage device, and substrate separation apparatus

According to one embodiment, there is provided a manufacturing method of a semiconductor device. The method includes forming a film to be processed on a substrate. The method includes forming a first resist pattern on the film, the first resist pattern having a first stepped structure including a plurality of steps. The method includes forming a second resist pattern on the first resist pattern by use of a template for nanoimprint. The second resist pattern has a second stepped structure, which is arranged corresponding to the first stepped structure and is formed such that a step-up surface extends perpendicularly to a flat surface. The method includes processing the film through the second resist pattern and the first resist pattern.

Manufacturing method of semiconductor device and template for nanoimprint

According to one embodiment, a substrate planarizing method includes dropping from above a substrate with topography, resist whose amount is determined in accordance with the volume of a concave portion according to the topography. The distance between a blank template with a flat pressing plane and the substrate is set to a predetermined distance and then the resist is cured. After that, the blank template is released from the resist and the substrate is entirely etched. The amount of resist to be dropped on the substrate is adjusted for units of shot of the substrate.

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Nagoya, Japan

Eiichi Soda