Kioxia Corporation

Toshiba Memory Corporation

Eiichi Shin

Gen Toyota

Eiji Takano

Tsutomu Fujita

Takashi Shirono

Susumu Yamamoto

Satoshi Hongo

Yukio Katamura

Ippei Kume

Masaya Shima

Takeori Maeda

Tatsuo Migita

Kazuki Takahashi

Mika Fujii

Hideki Matsushige

A semiconductor device includes a wiring layer; a first stacked body disposed on the wiring layer; a second stacked body disposed on the first stacked body in a stacking direction; and a first resin body disposed around a periphery of the first stacked body. The first stacked body includes a first pad electrically connected to the wiring layer, a first device layer electrically connected to the first pad, and a first electrode electrically connected to the first device layer. The second stacked body includes a second pad electrically connected to the first electrode and a second device layer electrically connected to the second pad. In the stacking direction, the first resin body is vertically located closer to the wiring layer than an interface between the first stacked body and the second stacked body.

Semiconductor device and method for manufacturing semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of stacked bodies on a substrate, each of the stacked bodies includes a plurality of semiconductor chips. The method further includes forming a plurality of first wires on the stacked bodies. The first wires connecting the stacked bodies to each other. The method further includes forming a resin layer on the stacked bodies and the first wires, then thinning he resin layer until the first wires are exposed.

Semiconductor device and method of manufacturing a semiconductor device

A semiconductor device including a base substrate B, which includes wire layers, chips C, C, C, C, C, and Cprovided on the base substrate B, and a protective film P provided on each of the side faces of the chips C, C, C, C, C, and C

Semiconductor device and method for producing the same

A method for manufacturing a semiconductor device includes bonding a supporting substrate and a first surface of a semiconductor substrate via a bonding layer, processing a second surface of the supporting substrate, opposite to the first surface, to shape the semiconductor substrate into a thin film. After shaping the semiconductor substrate into a thin film, polishing a part of the bonding layer formed at a beveled portion of the supporting substrate or the semiconductor substrate with a first polishing plane to remove the part of the bonding layera A33fter polishing the part of the bonding layer, polishing a remaining part of the bonding layer formed at the beveled portion of the supporting substrate or the semiconductor substrate with a second polishing plane different from the first polishing plane to remove the remaining part of the bonding layer.

Method for manufacturing semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device includes: bonding a first surface of a device substrate on which a device is formed on a first surface to a support substrate via an adhesive; after bonding the device substrate to the support substrate, grinding and thinning a second surface side opposite to the first surface of the device substrate based on an in-plane processing rate at the time of forming a semiconductor substrate by RIE; after thinning the device substrate, forming a hole penetrating the device substrate by RIE; and burying metal in the hole to forma through electrode.

Method of manufacturing semiconductor device

Growing community of inventors

Yokkaichi Mie, Japan

Eiichi Shin