Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Denso Corpora Tion

Eiichi Okuno

Takeshi Endo

Takeo Yamamoto

Naohiro Suzuki

Masaki Konishi

Tsuyoshi Yamamoto

Hiroki Nakamura

Hirokazu Fujiwara

Kensaku Yamamoto

Hideo Matsuki

Jun Kojima

Shinji Amano

Yoshiyuki Hisada

Takuya Fuse

Takashi Katsuno

Yoshihito Mitsuoka

Yukihiko Watanabe

Kunihiko Hara

Mitsuhiro Kataoka

Toshio Sakakibara

Shinya Kasamatsu

Takao Nojiri

Yasushi Kouno

Tatsuya Okabe

Hiroyuki Ichikawa

Toshimasa Yamamoto

Rajesh Kumar

Kenji Yamamoto

Shoichi Onda

Yuu Watanabe

Yuuichi Takeuchi

Nobuyuki Kato

Yuji Kimura

Jun Kawai

Atsuya Akiba

Hiroshi Ueshima

Shinichi Mukainakano

Masaru Kakizaki

Yasuo Kitou

Toshiki Itoh

Yasushi Kono

Susumu Sobue

Hiroki Watanabe

Keisuke Hachisuka

Shoichi Kawai

Satori Hachisuka

Ayahiko Ichimiya

Takeshi Hasegawa

Hirokazu Ohyabu

Masanori Nagaya

Yukihiko Watanbe

Ryo Kyung Lee

Yoshihiro Miyoshi

Koutarou Mizunuma

A verification terminal includes a storage unit that stores partial block data. The partial block data is the latest data that a part of block data for update and addition in chronological order. The verification terminal selects a plurality of approval terminals to approve the partial block data stored in the storage unit. When a transaction included in the partial block data stored in the storage unit is updated by the verification terminal, the verification terminal transmits an approval request that requests the selected approval terminals to approve the updated partial block data to which the updated transaction and a hash value of the partial block data before updating are added. The verification terminal executes an update process of the partial block data based on approval results returned from the approval terminals in response to the approval request transmitted by the approval requesting unit.

Verification terminal and verification system

In a verification terminal for verifying properness of an information item composed of a data string, a storage unit stores an own-terminal information item comprised of a data string, and a verification value generation unit generates a hash value of the own-terminal information item stored in the storage unit as an own-terminal hash value. A verification value acquisition unit communicates with at least one other verification terminal that should store an other-terminal information item t to thereby acquire a hash value of the other-terminal information item from the at least one other verification terminal as an other-terminal hash value. The other-terminal information item is conditioned to be identical to the own-terminal information item. A verification execution unit verifies properness of the own-terminal information item in accordance with whether the own-terminal hash value is consistent with the other-terminal hash value.

Verification terminal

A wakefulness maintenance apparatus includes a presentation recording unit and a presentation execution unit. The presentation recording unit records in-vehicle presentation contents each including a corresponding one of scenes, an auditory stimulus action associated with the scene, and at least one stimulus action selected from a group of a visual stimulus action, a tactile stimulus action, and an olfactory stimulus action which are associated with the scene. The presentation execution unit executes, based on the in-vehicle presentation contents recorded in the presentation recording unit, an in-vehicle presentation including provision of: the auditory stimulus action associated with the scene, and the at least one stimulus action selected from the group of the visual stimulus action, tactile stimulus action, and olfactory stimulus action which are associated with the scene.

Wakefulness maintenance apparatus

A multisensory interface control method for a multisensory interface that includes a plurality of information transmission channels, each of which performing information transmission by utilizing one or a plurality of five senses is provided. The multisensory interface control method includes: estimating a user status indicating at least one of an emotional status and an attentional status of a user; setting weightings each of which indicates a degree of importance of a corresponding information transmission channel in accordance with the user status estimated; and changing allocations of a plurality of sets of partial content that configure content transmitted via the multisensory interface, the allocations changed in accordance with the weightings.

Multisensory interface control method, multisensory interface control apparatus, and multisensory interface system

A composite heat storage material includes a heat storage material and an inorganic material. The heat storage material is made of a strongly correlated electron material that stores and dissipates heat via solid-solid phase transition. The inorganic material is different from the material of the heat storage material. The heat storage material and the inorganic material are mixed. The composite heat storage material can have characteristics of both the heat storage material and the inorganic material.

Composite heat storage material

A heat storage unit or a heat storage system is a heat storage unit including: a heat storage portion having a first material with a strongly correlated electron system material; and a heat conduction portion having a second material higher in a thermal conductivity than the first material and being in contact with the heat storage portion. The heat storage unit may have a laminated structure in which the heat storage portion and the heat conduction portion are alternately laminated on each other. For example, a metal-insulator phase transition material or a transition metal oxide may be used as the strongly correlated electron system material. The second material may be metal or ceramics.

Heat storage unit and heat storage system

An antenna device includes: antennas; magnetic oscillation element units converting electrical energy to high-frequency power; and a modulator outputting electrical energy input from outside to at least two magnetic oscillation element units, with a time difference to differentiate phases of high-frequency power converted from electrical energy by at least two magnetic oscillation element units. The magnetic oscillation element units respectively include a pair of electrodes, and further include, between the pair of electrodes, a PIN layer, a free layer, and an intermediate layer. A resistance value of an element configured by the PIN, free and intermediate layers changes according to the angle between the magnetization direction of the PIN layer and the magnetization direction of the free layer. The antennas transmit electromagnetic waves to open space outside the magnetic oscillation element units with the supply of high-frequency power.

Antenna device and high-frequency transmitter

A thermionic converter for converting thermal energy to electrical energy includes an emitter and a collector. The emitter emits thermionic electrons upon receipt of heat from a heat source. The emitter is made of a first semiconductor material to which a first semiconductor impurity is doped with a first concentration. The collector is spaced and opposite to the emitter to receive the thermionic electrons emitted from the emitter so that the thermal energy is converted to electrical energy. The collector is made of a second semiconductor material to which a second semiconductor impurity is doped with a second concentration less than the first concentration.

Thermionic converter

A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved.

SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device

A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.

Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same

A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench penetrating the source region and the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer. The deep layer is located under the base region, extends to a depth deeper than the trench and is formed along an approximately normal direction to a sidewall of the trench.

Silicon carbide semiconductor device including deep layer

A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.

Semiconductor device making method

A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype SiC substrate, and an electrode formed on a surface of the substrate. A 3C polytype layer, which extends obliquely relative to the surface of the substrate and whose end portion at the substrate surface is in contact with the electrode, is formed at the surface of the substrate. The 3C polytype layer has a lower bandgap than 4H polytype. Hence, electrons present in the 4H polytype region pass through the 3C polytype layer and reach the electrode. More precisely, the width of the passageway of the electrons is determined by the thickness of the 3C polytype layer. Consequently, with this semiconductor device, in which the passageway of the electrons is narrow, the electrons are able to reach the electrode at a speed close to the theoretical value, by the quantum wire effect. In this way, the contact resistance can be reduced in the semiconductor device.

Semiconductor device and method of manufacturing thereof

A SiC semiconductor device includes: a substrate; a drift layer on a first side of the substrate; a trench in the drift layer; a base region contacting a sidewall of the trench; a source region in an upper portion of the base region; a gate electrode in the trench via a gate insulation film; a source electrode on the source region; and a drain electrode on a second side of the substrate. The source region has multi-layered structure including a first layer and a second layer. The first layer as an upper layer contacts the source electrode with ohmic contact. The second layer as a lower layer has an impurity concentration, which is lower than an impurity concentration of the first layer.

Silicon carbide semiconductor device and manufacturing method of the same

A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6&#xd7;10cm.

Method for manufacturing silicon carbide semiconductor device having high channel mobility

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Mizuho, Japan

Eiichi Okuno