Fuji Photo Film Company, Limited

Fujifilm Corporation

Tokyo Shibaura Denki Kabushiki Kaisha

Tokyo Denryoki Kabushiki Kaisha

Eiichi Okamoto

Shinji Uya

Ryotaro Kondow

Shunsuke Tanaka

Kunihiko Tanaka

Masahiro Fukuda

Kazuhisa Horikiri

Koji Yoshida

Shozo Kondo

Fumio Andow

Mitsuru Yamaura

Minoru Shiiba

Makoto Isozaki

Noriko Katayama

Kenji Kojima

Hiroyuki Sakai

Junichi Inagaki

Tetsuo Matsushima

Masao Hori

Aya Ohkawa

Kazuki Nakajima

Aya Okawa

Norio Fujisawa

Megumu Mitani

Fumitoshi Toyokawa

Kyotaro Kondow

Haru Okawa

Printer

In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Gate oxide film structure for a solid state image pick-up device

Air-cleaning device

A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in the n-type epitaxial growth layer, the solid-state image pickup element comprising: a photoelectric converting section; and a charge transferring section having charge transfer electrodes which transfer charges produced in the photoelectric converting section, and the n-type silicon substrate has a specific resistance of 10/1,000 &#x3a9;cm or less.

Substrate for forming a solid-state image pickup element, solid-state image pickup element using the same, and method of producing the same

Component extractor for extracting nucleic acids

Printer for photographs

Photo image scanner

In production of a solid-state image pickup device including a semiconductor substrate, a photoelectric converter element group including a plurality of photoelectric converter elements formed in one column in one surface of the semiconductor substrate, a charge transfer path to transfer signal charge accumulated in the photoelectric converter elements, and readout gates to read signal charge from photoelectric converter elements to feed the charge to the charge transfer path, an ON or ONO film electrically insulates each transfer electrode constituting the charge transfer path from the semiconductor substrate and an oxide insulating film insulates a readout gate electrode constituting the readout gate from the semiconductor substrate to thereby improve electric characteristics of the solid-state image pickup device.

Growing community of inventors

Tokyo, Japan

Eiichi Okamoto