Fuji Electric Co., Ltd.

Japan Aerospace Exploration Agency

Eiichi Mizuta

Shunji Takenoiri

Masanori Inoue

Satoshi Kuboyama

Shuhei Tatemichi

Yuji Kumagai

A semiconductor device with a high radiation tolerance is provided. A semiconductor device comprising a semiconductor substrate, a first body region and a second body region provided on a front surface side of the semiconductor substrate, a neck portion provided between the first body region and the second body region, a first source region formed within the first body region and a second source region formed within the second body region, a first gate electrode provided to face the first body region between the first source region and the neck portion, a second gate electrode provided to face the second body region between the second source region and the neck portion, and an insulating film continuously provided between the first gate electrode and the semiconductor substrate, between the second gate electrode and the semiconductor substrate, and on the front surface side of the neck portion, is provided.

Growing community of inventors

Ibaraki, Japan

Eiichi Mizuta