Applied Materials, Inc.

Eiichi Matsusue

Wei Liu

Michael D Willwerth

Meihua Shen

David Palagashvili

Shashank C Deshmukh

Yohei Kawase

Anh-Kiet Quang Phan

Jong I Shin

Barrett Finch

Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.

Methods for high temperature etching a high-K material gate structure

Growing community of inventors

Yokohama, Japan

Eiichi Matsusue