Tokyo Electron Limited

Eiichi Komori

Tomohisa Kimoto

Daisuke Toriya

Yuichi Furuya

Hironori Yagi

Hiroyuki Mori

Manabu Amikura

Tsuneyuki Okabe

Seishi Murakami

Kensaku Narushima

Katsumasa Yamaguchi

Kohichi Satoh

Einosuke Tsuda

Takashi Kakegawa

Kouichi Sekido

Motoko Nakagomi

Taiki Katou

Kennan Mo

Hideaki Fujita

Nuri Choi

A powder conveying apparatus, a gas supply apparatus, and a method for removing powder that suppresses internal leakage are provided. A powder conveying apparatus includes a powder transport line via which a powder feedstock source is coupled to a vaporizer, and includes a first valve provided on a powder feedstock source-side of the powder transport line. The powder conveying apparatus includes a second valve provided on a vaporizer-side of the powder transport line, and includes a buffer tank configured to be filled with a purge gas. The powder conveying apparatus includes a first purge-gas supply line coupled to the powder transport line upstream of the second valve, the first purge-gas supply line enabling the purge gas to be supplied from the buffer tank to the second valve. The powder conveying apparatus includes a first purge gas valve provided on the first purge-gas supply line. The powder conveying apparatus includes a controller configured to control opening and closing of the first valve, the second valve, and the first purge gas valve.

Powder conveying apparatus, gas supply apparatus, and method for removing powder

A powder transfer apparatus includes: a powder transfer pipe connecting a powder raw material supply source to a vaporizer and configured to supply a powder to the vaporizer from the powder raw material supply source; a first purge gas supply pipe connecting a buffer tank to the powder transfer pipe at a first branch point and configured to supply a purge gas from the buffer tank to the powder transfer pipe; a first valve that is closer to the powder raw material supply source than the first branch point is; a second valve that is closer to the vaporizer than the first branch point is, an opening degree of the second valve being adjustable; a first purge gas valve provided on the first purge gas supply pipe; and a controller configured to control opening and closing of the first valve, the second valve, and the first purge gas valve.

Powder transfer apparatus, gas supply apparatus, and powder removal method

A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.

Raw material supply apparatus and raw material supply method

There is provided a pipe heating device, including; a sensor installed in a gas pipe; a heating part having a heat generation portion arranged so as to cover the gas pipe except for a region of the gas pipe where the sensor is installed; and a heat conducting member attached between an outer peripheral surface of the gas pipe and the sensor and formed of a material having a higher thermal conductivity than the gas pipe.

Pipe heating device and substrate processing apparatus

A valve device includes: valves configured to control a flow of processing gases supplied to a process vessel; a housing in which first flow paths through which the processing gases flow are formed; a heat diffuser configured to cover the housing and diffuse heat of the housing; a heating part configured to cover the housing covered with the heat diffuser and heat the housing via the heat diffuser; a supply configured to supply a coolant to a second flow path formed between the housing and the heat diffuser; and a controller configure to control the heating part to heat the housing to a first temperature when a predetermined process is performed on a target substrate, and before a start of a cleaning process of the process vessel, control the heating part to stop heating of the housing and control the supply to supply the coolant to the second flow path.

Valve device, processing apparatus, and control method

In a substrate processing apparatus for performing substrate processing by supplying, to a substrate, a source gas containing a source material of a film to be formed on the substrate, a processing chamber in which the substrate is mounted is provided. A source gas supply unit is configured to contain the source material and supplies the source gas toward the processing chamber. A buffer tank is configured to temporarily store the source gas received from the source gas supply unit. A valve arrangement unit in which supply on/off valves, each of which is configured to perform a supply and a shut-off of the supply of the source gas stored in the buffer tank to the processing chamber, are arranged. The valve arrangement unit, the buffer tank, and the source gas supply unit are arranged, in this order, above the processing chamber from the bottom side of the substrate processing apparatus.

Substrate processing apparatus, substrate processing system, and substrate processing method

A method of processing each of a plurality of substrates comprises: obtaining a first correction factor based on a first flow rate set value of a mass flow controller and a first measurement value of a mass flow meter; adjusting the first flow rate set value of the mass flow controller with the first correction factor so that the flow rate of the vaporized raw material becomes equal to a target value to process the substrate; obtaining a second correction factor based on a second flow rate set value of the mass flow controller and a second measurement value of the mass flow meter; and adjusting the second flow rate set value of the mass flow controller with the second correction factor so that the flow rate of the vaporized raw material becomes equal to the target value to process the substrate.

Method of processing substrate

A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.

Source material container

A raw material gas supply apparatus includes a raw material container, a carrier gas inlet line and a raw material gas line. The raw material container is configured to accommodate the solid raw material. The carrier gas inlet line is configured to discharge the carrier gas to the raw material gas originated from the solid raw material. The raw material gas is transferred to the consumption area together with the carrier gas through the raw material gas line. A flow rate of the carrier gas is set such that a variation rate of a gas flow rate of the raw material gas flowing in the raw material gas line obtained by subtracting a gas flow rate in the carrier gas inlet line from a gas flow rate in the raw material gas line becomes 10% or less.

Raw material gas supply apparatus and film forming apparatus

A film forming apparatus includes: a mounting table that is lifted/lowered between a processing location and a delivery location below the processing location; an encompassing member for encompassing the mounting table positioned at the processing location and to divide an inside of a processing container into a processing space of an upper space and a space of a lower side; an exhaust part for evacuating the inside of the processing container through the processing space; a purge gas supply unit configured to supply a purge gas to the lower side space; a clamp ring stacked on an upper surface of the encompassing member when the mounting table is positioned at the delivery location; and a guiding part formed at the encompassing member to be extended between an upper side of the mounting table and a lower side of the clamp ring and to guide a flow of the purge gas.

Film forming apparatus

A film forming apparatus that includes a mounting table for loading a wafer, a encompassing member surrounding the mounting table and dividing an inside of a process container, an exhaust part that vacuum exhausts the process container, a clamp ring loaded upon an upper space of the encompassing member and lifted from the upper space of the encompassing member while contacting an inner circumference part thereof with an outer circumference of the wafer loaded on the mounting table, and a cylindrical wall extended downward from the clamp ring, formed along a circumference of the clamp ring into a cylinder shape, and positioned between an outer circumference surface of the mounting table and an inner circumference surface of the encompassing member.

A trap mechanism is provided in the middle of an exhaust passage through which an exhaust gas, which is exhausted from a film formation device body that forms a thin film on the surface of a workpiece (W), flows, and recovers a gas to be collected that is contained in the exhaust gas by cooling and liquefying the gas to be collected. The trap mechanism includes: a housing having a gas inlet and a gas outlet; a partitioning member that partitions the inside of the housing into retention spaces; communication paths that communicate the retention spaces with one another; and cooling jackets that cool the communication paths to cool the exhaust gas. With this structure, the exhaust gas is adiabatically expanded while being cooled, and the gas to be collected is efficiently cooled and liquefied.

Trap mechanism, exhaust system, and film formation device

There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.

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Nirasaki, Japan

Eiichi Komori