Fujitsu Corporation

Eiichi Kawamura

Koichi Hashimoto

Teruyoshi Yao

Nobuhisa Naori

Katsuyoshi Kirikoshi

Tadasi Oshima

Masaharu Kobayashi

A semiconductor device includes a first insulation layer including a first conductor pattern, a second insulation layer formed on the first insulation layer and including a second conductor pattern, and a third conductor pattern formed on the second insulation layer, wherein there is formed a first alignment mark part in the first insulation layer by a part of the first conductor pattern, the third conductor pattern is formed with a second alignment mark part corresponding to the first alignment mark part, the first and second alignment marks forming a mark pair for detecting alignment of the first conductor pattern and the third conductor pattern, the second conductor pattern being formed in the second insulation layer so as to avoid the first alignment mark part.

Semiconductor device, semiconductor substrate and fabrication process of a semiconductor device

A method of fabricating a semiconductor device includes an exposing process in which a lower pattern is formed by a first exposing process and an upper pattern is formed thereon by a second exposing process, wherein the exposure process includes the steps of obtaining a first correction value representing a difference of first and second alignment error correction parameter preset values respectively used at the time of a first exposing process of exposing the lower patterns in a current lot and in a just-before lot, obtaining, as a second correction value, an optimum correction amount of a third alignment error correction parameter preset value needed for proper alignment of the upper pattern in the second exposing process of the just-before lot, the third alignment error correction parameter has been used in the second exposing process of the just-before lot for exposing the upper pattern, and obtaining an optimum correction parameter prediction value to be used for exposing the upper pattern in the second exposing process of the current lot, from the first correction value and the second correction value.

Fabrication method of semiconductor device

A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I &equals;I&dgr;/I to 0.2 or smaller, where I is an average value of light intensity in the photoresist film, and I&dgr; is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

Manufacture of semiconductor device using A-C anti-reflection coating

A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I.sub.sw =I.delta./I.sub.ave to 0.2 or smaller, where I.sub.ave is an average value of light intensity in the photoresist film, and I.delta. is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

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Kawasaki, Japan

Eiichi Kawamura