Ulvac, Inc.

Eiichi Iijima

Toshiharu Kurauchi

Muneto Hakomori

Tohru Satake

Guo Hua Shen

Masato Nakatuka

Takanobu Yano

Yuichi Orii

Yukio Masuda

A vacuum processing apparatus includes: a plurality of carriers to be mounted with a base member; a circulation path which is kept in a controlled atmosphere and through which the carriers circulate; a plurality of base member loading and unloading chambers which are disposed in the circulation path and which load and unload the base member to and from the carriers; and a plurality of vacuum processing chambers which are disposed between the base member loading and unloading chambers in the circulation path for performing a vacuum process on the base member.

Vacuum processing apparatus

A method for manufacturing a plasma display panel in which an electrical discharge gas is introduced into a space between a first substrate and a second substrate which are sealed together, the method including: a first deaeration step of releasing impurity gases from a protective film by heating the first substrate, on which the protective film is formed for withstanding plasma electrical discharge, to 280&#xb0; C. or more in a vacuum or in a controlled atmosphere; and a sealing step of sealing the front substrate, in which the impurity gases have been released from the protective film, and a rear substrate which are placed in contact with each other.

Method and apparatus for manufacturing plasma display panel

A method for manufacturing a sealed panel having a first substrate and a second substrate, including: a melting step of melting a sealing material which does not contain a binder for making the sealing material into paste form; a coating step of applying the melted sealing material onto a surface of the second substrate; and a sealing step of laminating the first substrate and the second substrate via the sealing material applied onto the surface of the second substrate.

Method and apparatus for manufacturing sealed panel and method and apparatus for manufacturing plasma display panel

[Object] In the control of electron beam focusing of a pierce-type electron gun, any influences from the space charge effect and space charge neutralizing action within the electron gun are eliminated to attain complete control of an electron beam. [Solving Means] Feedback control of the pressure within the electron gun is performed by directly measuring temperature at an internal of the pierce-type electron gun. It is desirable that locations where the direct measurement of the temperature at the internal of the electron gun is performed are an anode () and a flow register (). Further, the direct measurement can be performed at any one of a ring, an aperture and an exhaust pipe provided at an outlet or an inlet of any one of a cathode chamber (), an intermediate chamber, and a scanning chamber (). Accordingly, all of stabilization of beam producing area (optimized design of electron gun itself), stabilization of beam transporting portion and stabilization of beam using portion have become appropriate.

Method of controlling electron beam focusing of pierce-type electron gun and control apparatus therefor

Even when a gate valve for a vacuum apparatus used in a vapor deposition apparatus is in an open position, reliability of keeping a vapor deposition chamber vacuum can be improved by protecting an inner wall surface of a valve casing and a sealing member of a valve body against a vapor of a vapor deposition material. A gate valve () for a vacuum apparatus () is used as a gate valve for an electron gun (). When the valve is in a closed position, as with the related art technique, a valve body () detaches an electron gun () part from a vapor deposition chamber (). On the other hand, when the valve is in an open position, a valve chamber () is separated from the vapor deposition chamber () by inserting a cylindrical movable shield () into the valve chamber () to prevent the inner wall surface of a valve casing () and a sealing member () of the valve body () from being exposed to vapor in the vapor deposition chamber (), with the result that they are protected against the deposition of a deposition material (MgO) ().

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Chigasaki, Japan

Eiichi Iijima