Hitachi, Ltd.

Hitachi Automotive Systems, Ltd.

Hitachi Astemo Ltd.

Hitachi Chemical Company, Ltd.

Eiichi Ide

Toshiaki Morita

Nobutake Tsuyuno

Toshiaki Ishii

Yusuke Yasuda

Takeshi Tokuyama

Junpei Kusukawa

Kinya Nakatsu

Hiroshi Hozoji

Hisashi Tanie

Hiroshi Shintani

Toshiya Satoh

Yujiro Kaneko

Akitoyo Konno

Tokihito Suwa

Akira Matsushita

Yusuke Takagi

Hiromi Shimazu

Eiji Nishioka

Hiroshi Nakano

Takashi Naito

Mutsuhiro Mori

Haruo Akahoshi

Akihiro Miyauchi

Takuya Aoyagi

Koji Sasaki

Shinichi Fujino

Takashi Hirao

Teiichi Inada

Tatsuya Miyake

Motomune Kodama

Atsuo Nishihara

Shinji Sugimoto

Shiro Yamashita

Shintaro Tanaka

Masahiko Asano

Shigeru Kikuchi

Hideto Yoshinari

Taigo Onodera

Shinji Hiramitsu

Masami Oonishi

Motoko Harada

Takashi Nogawa

Masahito Mochizuki

Toru Kato

Takashi Kume

Mina Amo

Kazuaki Naoe

Hironori Nagasaki

Hiroyuki Temmei

Yoshinori Negishi

Yuujiro Kaneko

Yuusuke Yasuda

Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor deviceincludes a first terminalprojecting from a sealing bodyalong a given direction, and a second terminaladjacent to the first terminalwith a space formed between the second terminaland the first terminal, the second terminalprojecting from the sealing bodyalong a given direction in a direction of projection that is the same as a direction of projection of the first terminal. The first terminalhas a first exposed partexposed outside the sealing body. The second terminalhas a second sheathed partprojecting from the sealing body, the second sheathed partbeing sheathed with an insulating material, and a second exposed partprojecting from the second sheathed part, the second exposed partbeing exposed outside the sealing body. A distance D2 along a given direction from a front endof the second sheathed partto the sealing bodyis longer than a distance D1 along the given direction from a front endof the first exposed partto the sealing body

Semiconductor device, busbar, and power converter

A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layerabuts on a heat dissipation surfaceof a circuit body, and a heat dissipation memberabuts on the outside of the thermally conductive layer, which is a side of the heat dissipation surfaceof the circuit body. A fixing memberabuts on a side of the circuit bodyopposite to the heat dissipation surface. A connection memberis penetrated at the respective end portions of the heat dissipation memberand the fixing member. FIG.illustrates a state before a bolt and a nut of the connection memberare tightened. The heat dissipation memberholds a curved shape such that the central portion of the heat dissipation memberprotrudes toward the circuit body. The bolt and the nut of the connection memberare fastened and fixed at both ends of the heat dissipation memberand the fixing memberso as to sandwich the circuit body. The heat dissipation memberis elastically deformed to bring the heat dissipation memberinto close contact with the heat dissipation surfaceof the circuit bodyvia the thermally conductive layer, and surface pressure is applied from the heat dissipation memberto the heat dissipation surface

Power semiconductor device and manufacturing method of power semiconductor device

A power semiconductor apparatus provided with a first conductor section connected to a direct-current terminal for transmitting direct-current power; a second conductor section connected to an alternating-current terminal for transmitting alternating-current power; a semiconductor element which is disposed between the first conductor section and the second conductor section and is for converting the direct-current power to the alternating-current power; and an interposition section disposed between the first conductor section and the second conductor section, in which the interposition section has a first conductor layer connected to the first conductor section, a second conductor layer connected to the second conductor section, and a plurality of insulation layers disposed between the first conductor layer and the second conductor layer, with one or a plurality of third conductor layers sandwiched between the plurality of insulation layers.

Power semiconductor apparatus

A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Semiconductor device, electric power conversion device, and manufacturing method of semiconductor device

A power semiconductor device includes an insulating substrate on which a first conductor layer is arranged on one surface, a first conductor that is connected to the first conductor layer via a first connecting material, and a semiconductor element that is connected to the first conductor via a first connecting material. When viewed from a direction perpendicular to an electrode surface of the semiconductor element, the first conductor includes a peripheral portion formed larger than the semiconductor element. A first recess is formed in the peripheral portion so that a thickness of the first connecting material becomes thicker than other portions.

Power semiconductor device

An object of the present invention is to provide a structure, particularly, a power semiconductor module, which suppresses a bypass flow of a cooling medium and improves cooling efficiency. A structure according to the present invention includes a heat dissipation plate thermally connected to a heating element, and a resin region having a resin material that fixes the heating element and the heat dissipation plate, wherein the heat dissipation plate includes a fin portion including a plurality of fins protruding from a heat dissipation surface of the heat dissipation plate and formed to be exposed from the sealing resin material, and a wall portion formed to protrude from the heat dissipation surface to a same side as the fin and which separates the fin portion and the resin region.

Power semiconductor module with heat dissipation plate

An object of the invention is to provide a power converter that can be reduced in size. To achieve this, a power converter according to the invention includes: water passages arranged radially from an assumed central axis, each being trapezoid-shaped in cross section; and power modules placed between the water passages such that each of the power modules is sandwiched from both surfaces thereof by the water passages. Each of the power modules has an output terminal and positive and negative terminals on an end face located in a centrifugal direction side with respect to the assumed central axis. Any of the power modules and an adjacent one of the power modules are set in a front-back inverted manner.

Power converter having water passages for cooling power modules

An object of the present invention is to provide a power conversion device that suppresses a bypass flow and has superior heat dissipation performance. The power conversion device according to the present invention includes a power semiconductor moduleand a flow channel formation bodyon which the power semiconductor moduleis disposed. The power semiconductor modulehas a high thermal conductorwhich is disposed at a position between a semiconductor chip and the flow channel formation bodyand a sealing material that seals a power semiconductor element and the high thermal conductor. The high thermal conductorhas a fin protruding to the flow channel formation bodyat the side of the flow channel formation bodyand a part of the sealing material surrounding the fin and a leading edge of the fin are on almost the same plane.

Power conversion device

A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

Heat-dissipating structure and semiconductor module using same

An object of the invention is to manufacture a semiconductor module small. A metal wire () connecting a control electrode () and a control terminal () rises to form a first angle (&#x3b8;) from the control electrode () toward a first conductive portion (), gradually goes in substantially parallel to the first conductive portion () as the metal wire approaches the first conductive portion (), and is connected to the control terminal () to form a second angle (&#x3b8;) smaller than the first angle (&#x3b8;).

Semiconductor module and method of manufacturing semiconductor module

A power module or the like is provided in which lower inductance and miniaturization are achieved. The power module includes: main body units (to), cooling units (to) which cool the main body units (to), busbars () connected to power terminals () of the main body units (to), a casing (W) in which at least contact parts with the busbars () are insulative, and a metal member () which supports the casing (W). The metal member () tightly contacts the casing (W), thereby forming a box with one side opened. At least the main body units (to) and the busbars () are arranged inside the box. An insulating sealant is provided to fill the inside of the box.

Power module and method for manufacturing the same

In order to efficiently cool a heat-generating semiconductor element, it is desirable to cool a power semiconductor element from both surfaces. Therefore, in order to cool multiple power semiconductor elements, it is an effective way to alternately arrange a semiconductor component having the incorporated semiconductor element and a cooling device. A power conversion device for handling a high-power voltage needs to ensure pressure resistance between semiconductor elements or circuits inside the device. It is an effective way to seal the semiconductor component with a sealing material such as a silicone gel. Therefore, it is necessary to install the semiconductor component or the circuit having the incorporated semiconductor element, in a case from which a liquid silicone gel prior to curing does not leak even if the gel is injected. For these reasons, an object to be achieved by the invention is that the semiconductor element can be cooled from both surfaces by alternately arranging the semiconductor component having the incorporated semiconductor element and the cooling device. The above-described object can be achieved as follows. A substantially rectangular thin plate is subjected to mountain bending and valley bending so as to form a shape having as many recesses as the number of the mounted semiconductor components having the incorporated semiconductor element. Concurrently, a lateral side in a direction orthogonal to the above-described bending direction is bent so as to dispose the case in which all edges configuring an outer shape of the thin plate are arranged on substantially the same plane. The semiconductor component having the incorporated semiconductor element is arranged at a position serving as the recess of the case. The cooling devices are arranged so as to interpose the semiconductor component having the incorporated semiconductor element via the case. The semiconductor component having the incorporated semiconductor element is sealed with a silicone gel. In addition, preferably, the case is configured to include metal which has high heat conductivity. More preferably, the case is configured to include aluminum, copper, or an alloy whose principal components are both of these.

Power-module device, power conversion device, and method for manufacturing power-module device

A power conversion apparatus includes: a circuit body including a switching device; a base member forming a first concave portion and a cooling surface; and a wedge inserted in the first concave portion of the base member. The first concave portion of the base member is formed by a substrate portion forming the cooling surface, a first wall disposed on the opposite side of the substrate portion from the cooling surface, and an intermediate portion interconnecting the first wall and the substrate portion. The first wall forms an insertion space for insertion of the wedge, and a heat transfer plane forming a heat dissipating surface and a heat transfer path of the circuit body. The intermediate portion is plastically deformed by inserting the wedge into the insertion space, thus causing the first wall to be displaced toward the location of the circuit body.

Power conversion apparatus including wedge inserts

A waterproof electronic device includes: an electronic component module having an electronic component including a semiconductor element, a heat dissipating member provided on the electronic component in a thermally conductive manner, and an insulating material that surrounds the electronic component in such a manner that one surface of the heat dissipating member is exposed; and a waterproof film that is formed at least on whole surfaces in regions of the electronic component module that are to be immersed in a coolant.

Waterproof electronic device and manufacturing method thereof

An insulation film that strongly adheres to a power semiconductor module having a resin sealer and a conductor plate and has high thermal conductivity is provided. An insulation layeris provided between a power semiconductor moduleand a heat dissipation portionB. The power semiconductor moduleincludes a resin sealer, which covers a circumferential side surface of a conductor plate, and a plurality of recessesD are provided in the resin sealer. The insulation layeris formed of a spray coated film, an insulation film, and a resin layer, and the spray coated filmis formed on the surface of the resin sealerincluding recessesD to form a seamless flat surface. The planar size of each of the recessesD is greater than the planar size of each flat portion, which forms the spray coated film

Power semiconductor module and power module

Growing community of inventors

Tokyo, Japan

Eiichi Ide