Hitachi, Ltd.

Renesas Technology Corp.

Hitachi-kokusai Electric Inc.

Other

Hitachi Tohbu Semiconductor, Ltd.

Murata Manufacturing Co., Ltd.

Renesas Electronics Corporation

Eiichi Hase

Osamu Kagaya

Kenji Sekine

Kiichi Yamashita

Tetsuaki Adachi

Yasuhiro Nunogawa

Shizuo Kondo

Sakae Kikuchi

Iwamichi Kohjiro

Akishige Nakajima

Tooru Fujioka

Akira Endo

Yasunari Umemoto

Hideyuki Ono

Toshio Miyamoto

Hiroshi Kondoh

Tomio Yamada

Chushiro Kusano

Yoichi Kaneko

Shun Imai

Takahiro Fujita

Naoki Akiba

Ryoichi Itou

Cyushiro Kusano

Satoshi Tanaka

Isao Arai

Kazumichi Sakamoto

Provided is a multi-function radar apparatus capable of measuring both a distance to a target object and a temperature of the target object with high accuracy. A transmission signal produced from a high-frequency signal generating unit () is amplified by a transmission signal amplifying unit () while intermittently stopped by a transmission intermittent stop switch (), and is emitted to a target object () via a circulator unit (). A reflected wave from the target object () is input as a reception signal to a transmitting and receiving antenna () while the transmission signal is emitted, and a radiated wave from the target object () is input as the reception signal thereto while the transmission signal is not emitted. The reception signal is amplified by a reception signal amplifying unit () via the circulator unit (), and is mixed by a frequency converting unit () with the transmission signal branched by a high-frequency signal branching unit () to thereby generate a beat signal. A signal processing unit () calculates the distance to the target object () and the temperature of the target object () based on the beat signal amplified by a beat signal amplifying unit ().

Multi-function radar device

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Semiconductor device

In a radio-frequency wave module including a transmission path based on a distributed parameter element, the transmission path being part of an input/output terminal, a plurality of cavity-structured concave portions for containing semiconductor-including mounted components therein, grounding-use metallic electrodes, dielectric substrates of at least two or more layers, and semiconductors, electrical separation is established between the grounding-use metallic electrodes which form the transmission paths based on the distributed parameter element and at least one of the grounding-use metallic electrodes which are formed on bottom surfaces of the plurality of cavity-structured concave portions for containing the semiconductor-including mounted components therein.

RF module

A high frequency switch circuit device includes: at least one distributed element of at least one transmission line; at least two lumped elements of at least one resistor and at least one capacitor; at least one semiconductor device; at least one input terminal; at least two output terminals; and another transmission line, having an open end or a short-circuited end, connected to the input terminal. A total length of the input terminal and said another transmission line is set to be about an integer times &#x3bb;/2 in case the transmission line has the open end and about an integer times (&#x3bb;/4+&#x3bb;/2) in case the transmission line has the short-circuited end. One of the output terminals is used as an input port to which a signal is inputted, and another one of the output terminals is used as an output port from which a signal is outputted.

High-frequency switch circuit device

A filter circuit filters unnecessary frequency components within a signal. The filter circuit includes a first and a second line pattern and a closed loop pattern portion. The first line pattern has two ends and one end thereof is connected to an input terminal and the other is opened or grounded. The second line pattern has two ends and one end thereof is connected to an output terminal and the other being opened or grounded. The closed loop pattern portion, which is interposed between the first and the second line pattern, has two or more closed loop patterns and each of the closed loop patterns has an electromagnetic coupling portion coupled to each of the first and the second line pattern.

Filter circuit and transmitter and receiver using the same

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

The present invention relates to a high frequency circuit module in which a two or more layer dielectric substrate is used. The dielectric substrate provided between a conductor line of a matching circuit on the input side or on the output side and a metal ground is composed of two or more layers. Since a required part can be increased in thickness without changing the thickness of the whole dielectric substrate, the transmission loss can be reduced and the miniaturization of the high frequency circuit module and the communication device using the same can be realized.

High frequency circuit module and communication device

In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series is connected between the collector and emitter of each HBT. The p-side is connected to the collector side, and the n-side is connected to the emitter side. A protection circuit in which pn junction diodes of the number equal to or smaller than that of the pn junction diodes are connected in series is connected between the base and the emitter. The p-side is connected to the base side, and the n-side is connected to the emitter side. With the configuration, in the case where an overvoltage is applied across the collector and emitter due to a fluctuation in load on the antenna side, the collector terminal is clamped by an ON-state voltage of the protection circuits, so that the HBT can be prevented from being destroyed. Since the similar protection circuit is assembled between the base and emitter, even when the operator touches the module at the time of manufacturing the high frequency power amplifier module, the HBT can be prevented from being destroyed by the clamping effect of the protection circuit between the base and emitter and the protection circuit between the collector and emitter. Thus, an improved manufacturing yield of the high frequency power amplifier module and a wireless communication apparatus can be achieved, and destruction caused by fluctuation in load impedance of the wireless communication apparatus can be prevented.

High-frequency power amplification module and radio communication device

A semiconductor integrated circuit device is provided for high-frequency or high-speed circuitry having stabilized characteristics and reduced influence on surrounding devices. In the device structure, ground leads extending from a metal substrate or metal layer for mounting ICs for high-frequency or high-speed circuitry are disposed adjacent to at least one side of signal leads and a width W or a space S of at least a part of the leads are set to inherent values for reducing the inductance of ground leads. Further, passive circuit chips for short-circuiting or blocking a high frequency signal are mounted on the metal substrate to suppress high-frequency component signals flowing through power supply leads and ground leads. According to the structure, a high-frequency potential difference due to the inductance of the ground and power supply leads is suppressed and RF energy is confined within the semiconductor integrated circuit device, so that deterioration of the characteristics of the high-frequency or high-speed ICs can be reduced and leakage of the RF signal to the outside of the semiconductor integrated circuit device can be prevented to avoid influence on surrounding devices.

Semiconductor integrated circuit devices for high-speed or high frequency

A microwave multi-stage power amplifier has matching circuits for input and output stages and one or more inter-stage matching circuits. The amplifier and a signal output pad and first and second voltage supply pads are formed at one and the same semi-insulating substrate. A first FET in the output stage has its drain connected to the first voltage supply pad through a first distributed line and further connected to the signal output pad through a second distributed line in which the first and second distributed lines contribute to formation of the matching circuit for the output stage. A second FET in a stage preceding to the output stage has its drain connected to the second voltage supply pad through a third distributed line serving as a connection conductor. The first distributed line has a width larger than that of the third distributed line and has a length which limits an impedance seen at the drain of the output stage FET towards the first voltage supply pad at an operation frequency of the amplifier to a value other than infinity.

Monolithic integrated circuit device having microwave power amplifier

Growing community of inventors

Iruma, Japan

Eiichi Hase