Shin-etsu Chemical Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Other

Ciba-geigy Corporation

Hokko Chemical Industry Co., Ltd.

Shin-etsu Chemical Ltd., Co.

Eiichi Asano

Toshio Shiobara

Kazutoshi Tomiyoshi

Takayuki Aoki

Shoichi Osada

Shigeki Ino

Takaaki Fukumoto

Noriaki Higuchi

Yasuo Kimura

Tsuyoshi Honda

Tatsuya Kanamaru

Satoshi Okuse

Masayuki Umeno

Tatsuya Ishizaki

Kenji Ohashi

Takaaki Shimizu

Koji Futatsumori

Masachika Yoshino

Kazuhiro Arai

Peter Flury

Masatoshi Takita

Wolfgang Scharf

Tarou Shimoda

Tadashi Okada

An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a curing agent in the form of a naphthalene type phenolic resin, (C) an inorganic filler, and (D) a phosphazene compound is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.

Semiconductor encapsulating epoxy resin composition and semiconductor device

An epoxy resin composition comprising (A) at least one epoxy resin comprising (a) a naphthalene ring-containing epoxy resin having at least one substituted or unsubstituted naphthalene ring in a molecule and having an epoxy equivalent of 175 to 210, (B) a phenolic resin having at least one substituted or unsubstituted naphthalene ring in a molecule, and (C) an inorganic filler, the substituted or unsubstituted naphthalene ring of the epoxy resin (a) being contained in an amount of 45 to 60% by weight in the total amount of the epoxy resin (A) is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.

In an epoxy resin composition comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic compound, and (D) an inorganic filler, the inorganic compound (C) is an oxide of metal elements at least one of which is a metal element of Group II in the Periodic Table having a second ionization potential of up to 20 eV, typically ZnSiO, ZnCrO, ZnFeOor ZnMoO. When used for semiconductor encapsulation, the epoxy resin composition is highly reliable and cures into a product which is effective for minimizing electrical failure such as defective insulation due to a copper migration phenomenon.

A semiconductor encapsulating epoxy resin composition is provided comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a molybdenum compound, (D-i) an organopolysiloxane, (D-ii) an organopolysiloxane cured product, or (D-iii) a block copolymer obtained by reacting an epoxy resin or alkenyl group-bearing epoxy resin with an organohydrogenpolysiloxane, and (E) an inorganic filler. The composition has improved moldability and solder crack resistance while exhibiting high flame retardance despite the absence of halogenated epoxy resins and antimony oxide.

A semiconductor encapsulating epoxy resin composition comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a molybdenum compound, and (D) 300-900 parts by weight per 100 parts by weight of components (A) and (B) combined of an inorganic filler contains nitrogen atoms in an amount of 1.5-20% by weight based on the weight of components (A) and (B) combined. Cured parts of the composition exhibit high-temperature capabilities and flame retardance despite the absence of halogenated epoxy resins and antimony trioxide.

Flip-chip type semiconductor device

Epoxy resin compositions comprising (A) an epoxy resin having an epoxy equivalent of at least 185 and possessing a structure in which two benzene rings can be directly conjugated, carbon atoms having an sp type atomic orbital accounting for at least 50% of all the carbon atoms, (B) a &bgr;-naphthol type phenolic resin curing agent, (C) a curing accelerator, and (D) an inorganic filler cure into products having satisfactory solder crack resistance on use of lead-free solder and improved flame retardance despite the absence of halogenated epoxy resins and antimony compounds and are thus suited for semiconductor encapsulation.

Light-transmissive epoxy resin composition and semiconductor device

Semiconductor encapsulating epoxy resin compositions comprising an epoxy resin, a phenolic resin curing agent, a fire retardant comprising zinc molybdate carried on spherical silica having a mean particle diameter of 0.2-20 &mgr;m and a specific surface of 1-20 m /g, and an inorganic filler are able to provide cured products having excellent fire retardance. The compositions have good flow and curing properties and excellent reliability and do not pose a hazard to human health or the environment.

Semiconductor encapsulating epoxy resin compositions, and semiconductor devices encapsulated therewith

An epoxy resin composition comprising (A) a biphenyl skeleton epoxy resin, (B) a biphenyl skeleton phenolic resin as a curing agent, (C) molybdenum compound, and (D) an inorganic filler is suited for semiconductor encapsulation since it is effectively moldable and cures into a part having improved reflow crack resistance, moisture resistance, and flame retardance. It does not pose a hazard to human health or the environment.

A semiconductor encapsulating epoxy resin composition is provided comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a microencapsulated flame retardant comprising a red phosphorus-base core coated with a thermoplastic resin and/or thermosetting resin, (D) a molybdenum compound, and (E) an inorganic filler. The composition and its cured product have moisture-proof reliability and high flame retardance despite the absence of halogenated epoxy resins and antimony oxide.

An epoxy resin composition contains (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a curing catalyst, and (D) an inorganic filler. The catalyst is a quaternary phosphorus compound or a quaternary phosphorus compound which has been mixed and reacted with a phenolic resin having at least two hydroxyl groups. The composition is effectively flowable, moldable and curable and thus suitable for semiconductor encapsulation.

By removing a fraction of fine particles having a particle size of less than 2 &mgr;m from starting inorganic filler particles having a mean particle size of 10-50 mm and adding thereto particles having a mean particle size of 0.1-2 &mgr;m and a specific surface area of 3-10 m,/g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 &mgr;m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable.

Inorganic filler, epoxy resin composition, and semiconductor device

A flame retardant epoxy resin composition suitable for semiconductor encapsulation contains (A) a crystalline epoxy resin whose 30 wt % m-cresol solution has a viscosity of lower than 80 centipoise at 25&deg; C., (B) a curing agent having at least two phenolic hydroxyl groups, and (C) silica. The composition optionally contains (D) an organopolysiloxane, (E) an organic phosphine oxide, (F) an amide group-containing release agent, and/or (G) a silane coupling agent. The cured composition achieves flame retardance rating UL-94 V-0 without a need for flame retardants and remains stable at high temperature.

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Gunma-ken, Japan

Eiichi Asano