Murata Manufacturing Co., Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Eigo Tange

Yasushi Shigeno

Akishige Nakajima

Shinya Osakabe

Hidenori Suenaga

Atsushi Kurokawa

Masao Yamane

Hiroyuki Takazawa

Takashi Ogawa

Tadashi Matsuoka

Hayato Nakamura

Takayuki Tsutsui

Shigeki Koya

Shinichiro Takatani

Takeyuki Okabe

An inductor includes first and second wirings respectively formed in a substantially spiral shape on first and second surfaces of a multilayer substrate. The multilayer substrate includes plural dielectric layers stacked on each other in a predetermined direction. The multilayer substrate includes a first layer having the first surface, which is an end surface in the predetermined direction, and a second layer having the second surface within the multilayer substrate. The width of the second wiring is smaller than that of the first wiring. The first and second wirings are electrically connected in parallel with each other. The inductance of the first wiring and that of the second wiring are substantially equal to each other. When the first and second wirings are projected on the first surface in the predetermined direction, entirety of a projected image of the second wiring is contained within that of the first wiring.

Inductor and power amplifier module

Provided is a high frequency module capable of reducing the IMD. During the transmission/reception operation based on W-CDMA, control signals VSWCC, VTRXCC are output as Hi signals from a control logic. Consequently, transistor Tis turned ON, and transistors T, Tare respectively turned OFF. When the transistor Tis turned ON, the voltage output from an operational amplifier is output as the signal VVSW to a control terminal, and the control signal VTRXC is output as a Hi signal. The signal VVSW is of a voltage level that is lower than that of the control signal VTRXC. The control signal VTRXC is a signal for turning ON a transistor circuit Q, and the signal VVSW is a signal for supplying a DC voltage to the antenna potential. It is thereby possible to reduce the ON resistance of the transistor circuit Qand improve the IMD characteristics.

High frequency module

Reduction of intermodulation distortion in a high-frequency switch is achieved. A semiconductor device () includes an antenna terminal (ANT_LB), plural external terminals (RX_LB, TX_LB, TRX_LB, TERM_LB), plural first high-frequency switches (to), and plural control terminals. Each first high-frequency switch includes plural first field-effect transistors, plural first resistors (Rg_to Rg_) connected to the gate terminals of the first field-effect transistors, and a second resistor (Rc) disposed between the corresponding control terminal and the first resistors. The second resistor in the first high-frequency switch disposed between the first terminal supplied with an RF transmission signal and an RF reception signal of a frequency division duplex system and the antenna terminal is configured so that linearity of current-voltage characteristics thereof is higher than linearity of current-voltage characteristics of the first resistor.

Semiconductor device and high-frequency module

The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrodeis formed in an active region defined by an element separation portionon a main surface of a substratecomprising GaAs. The gate electrodeis patterned so as to extend in the vertical direction of the page surface between source electrodesand drain electrodes, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrodedisposed outside the active region is reduced, and the area of a gate padA is reduced.

Semiconductor device

There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

Electronic component for communication device and semiconductor device for switching transmission and reception

Electric component for communication device and semiconductor device for switching transmission and reception

An object of the present invention is to provide an antenna switch circuit that effectively reduces signal leakages at a cross point even at higher operating frequencies and a high frequency module containing said antenna switch module. The antenna switch circuit comprises: a high frequency signal line to transmit a transmitting signal to be input to transmitting terminals to an antenna terminal and also to transmit a receiving signal to be input to the antenna terminal to receiving terminals; switches that are connected in the middle of the high frequency signal line between transmitting terminal and antenna terminal; switches that are connected in the middle of the high frequency signal line between receiving terminal and antenna terminal; and signal lines to transmit control signals for controlling turning on and off of the switches.

Antenna switch circuit and high frequency module having the same

The present invention is directed to improve high frequency characteristics by reducing inductance of a source. In an HEMT assembled in a power amplifier device, each of a drain electrode, a source electrode, and a gate electrode is constructed by a base portion and a plurality of fingers projected in a comb-teeth shape from the base portion, and the fingers of the electrodes mesh with each other. In the source electrode, a width of the fingers positioned at both ends of the plurality of fingers is wider than a width of each of the fingers positioned between both ends. The width of each of the fingers positioned at both ends is a width equal to or larger than a sum of the widths of the plurality of fingers positioned between both ends, and the width of the base portion is wider than that of each of the fingers positioned at both ends. An electrode pad provided for the source base portion and an external electrode terminal are connected to each other via a conductive wire.

Growing community of inventors

Takasaki, Japan

Eigo Tange