Fujitsu Corporation

Nitto Chemical Industry Co., Ltd.

Other

Jgc Catalysts & Chemicals Ltd.

Catalysts & Chemicals Industries Co., Ltd.

Fujitsu Limtied

Ei Yano

Koji Nozaki

Takahisa Namiki

Keiji Watanabe

Yoshihiro Nakata

Miwa Kozawa

Junichi Kon

Miwa Igarashi

Yoko Kuramitsu

Katsumi Suzuki

Shigeyuki Maruyama

Naoyuki Watanabe

Takafumi Hashitani

Iwao Sugiura

Shirou Ozaki

Yasuo Yamagishi

Satoshi Takechi

Makoto Takahashi

Akiko Kotachi

Susumu Kida

Ichiro Midorikawa

Takashi Maruyama

Tamotsu Owada

Shun-ichi Fukuyama

Yukio Takigawa

Masayuki Ochiai

Keiko Yano

Nobuo Igusa

Isamu Takachi

Takashi Saitoh

Michio Komatsu

Tadahiro Imada

Kazuhiro Tashiro

Akira Nakashima

Yuji Uehara

Miki Egami

Eiichi Hoshino

Daisuke Koizumi

Tomio Nakamura

Shigeru Shimizu

Michiaki Kanamine

Keita Ohtsuka

Hiroshi Shirataki

Yoko Makino

Wataru Sotoyama

Yasuhiro Yoneda

Tetsuzo Yoshimura

Kenji Nakagawa

Yasushi Kobayashi

Hiroshi Kudo

Masashi Uzawa

Satoshi Tatsuura

Masami Ishikawa

Akira Oikawa

Kazushi Ishida

Masahiro Uraguchi

Masao Kanazawa

Toshikatsu Minagawa

Masafumi Nakaishi

Kotaro Shirabe

Naoki Nishio

Yuichi Yamamoto

Shiro Ozaki

A semiconductor device of this invention has a copper wiring layer, of which a layer, to which a composition including at least one substance selected from the group consisting of ammonia and organic bases is applied, and a silicon-containing insulating film are sequentially superimposed on the copper wiring layer. Accordingly, semiconductor devices having insulating layers which adheres well to the copper serving as the wiring material can be obtained.

Semiconductor device and manufacturing method therefor

A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

Manufacturing process of semiconductor device

To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

Resist pattern swelling material, and method for patterning using same

A layer of a porous insulating film precursor is formed on or over a substrate, a layer of a specific silicon compound is then formed, this silicon compound layer is pre-cured as necessary, and the porous insulating film precursor is exposed to UV through the silicon compound layer or pre-cured layer.

Silicon compound, ultraviolet absorbent, method for manufacturing multilayer wiring device and multilayer wiring device

The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si&#x2014;O&#x2014;Si bond, an Si&#x2014;CHbond and an Si&#x2014;CHx- bond, where x represents an integer of 0 to 2.

Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same

The present invention relates to a coating liquid for forming an amorphous silica-based coating film with a low dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of preparing the same. The coating liquid may contain a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), or may contain a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl ortho silicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), mixing the reaction product with specific alkoxysilane or a hydrolysate or a partial hydrolysate thereof, and hydrolyzing all or a portion of the mixture according to the necessity. In addition, the coating liquid is prepared by mixing components described above at a specific ratio and under specific process conditions.

Coating liquid for forming amorphous silica-based coating film with low dielectric constant

The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.

Method for forming resist pattern and method for manufacturing a semiconductor device

A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si&#x2014;CHbonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CHgroups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.

Composition for forming insulating film and method for fabricating semiconductor device

Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing film is formed which is in contact with an insulator film and also in contact with a wiring line on the other side surface thereof, and has an interfacial roughness between the wiring line and the interfacial roughness reducing film smaller than that between the insulator film and the interfacial roughness reducing film.

Roughness reducing film at interface, materials for forming roughness reducing film at interface, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device

The present invention aims at providing: a material for forming an adhesion reinforcing layer which can reinforce the adhesion between a low dielectric constant film, especially a low dielectric constant film containing an inorganic material, and other members; an adhesion reinforcing layer formed by the said material and exhibits superior adhesion; a fast and highly reliable semiconductor device having the adhesion reinforcing layer; and a manufacturing method thereof. The material for forming an adhesion reinforcing layer contains at least any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane. The adhesion reinforcing layer is formed by the said material. The manufacturing method of a semiconductor device includes a process for forming a low dielectric constant film and, at least before or after the process for forming a low dielectric constant film, a process for forming an adhesion reinforcing layer with the said material.

Material for forming adhesion reinforcing layer, adhesion reinforcing layer, semiconductor device, and manufacturing method thereof

Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof

In a method for manufacturing a semiconductor device, including forming an insulator film including a material having Si&#x2014;CHbond and Si&#x2014;OH bond, and irradiating the insulator film with ultraviolet rays, the rate of decrease of C concentration by X-ray photoelectron spectroscopy is not more than 30%, and the rate of decrease of one or more bonds selected from the group consisting of C&#x2014;H bond, O&#x2014;H bond and Si&#x2014;O bond of Si&#x2014;OH is not less than 10%, as a result of ultraviolet ray irradiation. A low-dielectric-constant insulator film that has a high film strength and can prevent increase of dielectric constant due to moisture absorption, a semiconductor device that can prevent device response speed delay and reliability decrease due to parasite capacity increase, and a manufacturing method therefor are provided.

Insulator film, manufacturing method of multilayer wiring device and multilayer wiring device

A negative resist composition containing an alkaline-soluble resin as a base material, in which an oxetane structure represented by the following formula (1): is contained in a structure of the alkaline-soluble resin or in a structure of a compound used in combination with the alkaline-soluble resin, is disclosed.

Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device

Growing community of inventors

Kawasaki, Japan

Ei Yano