International Business Machines Corporation

Ehud Nir

Rajiv V Joshi

Donald W Plass

Rouwaida N Kanj

Noam Jungmann

James W Dawson

Elazar Kachir

Systems and methods for determining optimal memory device precharge voltages are provided herein. In addition, systems and methods for providing localized sense amplification and circuit assist circuitry are described herein. Embodiments provide for determining precharge multipliers that may be used to determine the optimal precharge voltage based on a precharge source voltage. According to embodiments, the precharge source voltage may be Vdd or Vcs. Optimizing the precharge voltage maximizes memory device performance and functional characteristics, including, but not limited to, stability, efficiency, power, writability, and reliability.

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Hod Hasharon, Israel

Ehud Nir