Universitat Gesamthochschule Kassel

Witec Wissenschaftliche Instrumente Und Technologie Gmbh

Technische Universitat Kaiserslautern

Egbert Oesterschulze

Christophe Mihalcea

Rainer Kassing

Carsten Kortz

The invention relates to a method for producing an aperture ( ) in a semiconductor material ( ) comprising the following steps: Preparing a semiconductor wafer ( ), for example, a (100)-oriented silicon wafer having an upper surface ( ) and a lower surface ( ); producing a cavity ( ) with a side wall ( ) in the upper surface ( ) of the semiconductor wafer ( ) by partially etching said upper surface ( ), whereby the cavity ( ) comprises a closed bottom area ( ) which faces the lower surface ( ) and which preferably has, in particular, a convex or, in particular, a concave corner or edge or a curvature of this type. After depositing an oxide layer ( ) on the semiconductor material ( ) at least in the area of the cavity ( ) by oxidizing the semiconductor material ( ), whereby the oxide layer ( ) preferably comprises an inhomogeneity ( ) in the bottom area ( ), the semiconductor material ( ) is selectively etched back on the lower surface ( ) of the semiconductor wafer ( ) until at least the oxide layer (26) located in the bottom area ( ) is exposed. Afterwards, the exposed oxide layer ( ) is etched until it is at least severed. In addition, the invention relates to an aperture ( ) in a semiconductor material ( ) especially produced according to the inventive method, and to different uses of such an aperture ( ).

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Kassel, Germany

Egbert Oesterschulze