Technion Research & Development Foundation Limited

Elop Electro-optics Industries Ltd.

Efrat Lifshitz

Aldona Sashchiuk

Lilac Amirav

Vladimir Krupkin

Ehud Galun

Marina Sirota

Ariel Kigel

Ruth Osovsky

Viktoria Kloper

Maya Brumer-Gilary

Dima Cheskis

The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSeSstructure; or the core semiconductor material is CdTe and the alloy shell semiconductor material has either the CdTeSeor CdTeSstructure.

Core-alloyed shell semiconductor nanocrystals

A method is provided for producing semiconductor nanoparticles comprising: (i) dissolving a semiconductor compound or mixture of semiconductor compounds in a solution; (ii) generating spray droplets of the resulting solution of semiconductor compound(s); (iii) vaporizing the solvent of said spray droplets, consequently producing a stream of unsupported semiconductor nanoparticles; and (iv) collecting said unsupported semiconductor nanoparticles on a support.

Spray method for producing semiconductor nano-particles

A passive Q-switch for a laser system, and a method for its production. The laser is operative at near infrared wavelength region, including the eye-safe region. The Q-switch includes a saturable absorber based on IV-VI semiconductor nanocrystals (NCs), embedded in a polymer matrix. The NCs preferably include lead selenide, lead sulfide, or lead selenide sulfide. The NCs may be surface passivated, and may feature a PbSe/PbS core-shell configuration.

Passive Q-switch laser

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Haifa, Israel

Efrat Lifshitz