Applied Materials, Inc.

Other

Lam Research Corporation

Efrain Quiles

Michael Robert Rice

Robert B Lowrance

Arnold Kholodenko

Hamid Noorbakhsh

Mehran Behdjat

Brent Vopat

Joseph Yudovsky

James D Carducci

Shamouil Shamouilian

Nir Merry

Richard Howard Gould

Vinay K Shah

Richard M Blank

Siamak Salimian

Dennis Stanley Grimard

Mohsen Salek

Andrew J Constant

Aaron Webb

Ke Ling Lee

Adam Brailove

Maya Shendon

Gary J Rosen

David Guldner

In one aspect, a valve assembly adapted to seal an opening in a chamber is disclosed. Valve assembly includes a housing being adapted for coupling to a chamber surface having the opening therein, the housing including a threshold portion positioned adjacent to the chamber opening, the threshold portion having one or more inlets adapted to supply gas to an interior region of the housing adjacent to the chamber opening; and a sealing surface adapted to selectively (1) seal the opening, and (2) retract from the opening so as not to obstruct substrate passage. Numerous other system aspects are provided, as are methods and computer program products in accordance with these and other aspects.

Substrate processing system, valve assembly, and processing method

Systems and techniques for forming buffer gas microclimates around semiconductor wafers in environments external to a semiconductor processing chamber are disclosed. Such systems may include slot doors that may allow for single wafers to be removed from a multi-wafer stack while limiting outflow of buffer gas from a multi-wafer storage system, as well as buffer gas distributors that move in tandem with robot arms used to transport wafers for at least some of the movements of such robot arms.

Multi-station tool with wafer transfer microclimate systems

In a first aspect, a first substrate processing system is provided that includes (1) a chamber having a plurality of opening through which a substrate may be transported; (2) a substrate carrier opener coupled to a first one of the plurality of openings; (3) a thermal processing chamber coupled to a second one of the plurality of openings; and (4) a wafer handler contained within the chamber, having a substrate clamping blade and a blade adapted to transport high temperature substrates.

Processing system with the dual end-effector handling

A batch processing platform used for ALD or CVD processing is configured for high throughput and minimal footprint. In one embodiment, the processing platform comprises an atmospheric transfer region, at least one batch processing chamber with a buffer chamber and staging platform, and a transfer robot disposed in the transfer region wherein the transfer robot has at least one substrate transfer arm that comprises multiple substrate handling blades. The platform may include two batch processing chambers configured with a service aisle disposed therebetween to provide necessary service access to the transfer robot and the deposition stations. In another embodiment, the processing platform comprises at least one batch processing chamber, a substrate transfer robot that is adapted to transfer substrates between a FOUP and a processing cassette, and a cassette transfer region containing a cassette handler robot. The cassette handler robot may be a linear actuator or a rotary table.

Batch processing platform for ALD and CVD

A plasma reactor includes a chamber adapted to support an evacuated plasma environment, a passageway connecting the chamber to a region external of the chamber, the passageway being defined by spaced opposing passageway walls establishing a passageway distance therebetweeen, and a plasma-confining magnet assembly adjacent the passageway. The plasma-confining magnet assembly includes a short magnet adjacent one of the passageway walls and having opposing poles spaced from one another by a distance which a fraction of the gap distance, the short magnet having a magnetic orientation along one direction transverse to the direction of the passageway, and a long magnet adjacent the other one of the opposing passageway walls and generally facing the short magnet across the passageway and having opposing poles spaced from one another along a direction transverse to the passageway by a pole displacement distance which is at least nearly as great as the gap distance, the long magnet having a magnetic orientation generally opposite to that of the short magnet.

Plasma reactor with a tri-magnet plasma confinement apparatus

An apparatus is provided for locking and unlocking a camper shell from the inside. The device can be purchased as an inexpensive after market part and easily and quickly installed without the need for expensive tooling. The device includes a handle having proximal and distal ends and fashioned with a lateral bore at its proximal end for connecting with a torsion bar already existing on the latching mechanism of the camper shell. The distal end of the handle includes a cam, pivotally connected thereto, which can move between a position which in which the cam is generally flush with the handle and other positions in which the cam extends laterally from the handle. A cam lock is provided to engage the cam and hold it in one or more selected positions, the positions providing corresponding amounts of lateral extension from the handle. The when extended, the cam prevents the handle from being turned, thereby preventing the camper shell from being opened.

Personal security lock for use with a camper shell of a truck

A chuck,for holding a substrate,comprises a surface,capable of receiving the substrate,the surface,having a gas inlet port,and a gas exhaust port,A non-sealing protrusion is between the gas inlet port,and the gas exhaust port,The non-sealing protrusion,impedes the flow of heat transfer gas between the gas inlet port,and the gas exhaust port,without blocking the flow of heat transfer gas. Preferably, a sealing protrusion,is provided around the periphery of the chuck,to form a substantially gas-tight seal with the substrate,to enclose and prevent leakage of heat transfer gas into a surrounding chamber

Chuck having pressurized zones of heat transfer gas

A temperature control system 10 is used to control the temperature of a chamber surface 15, such as a convoluted external surface, of a process chamber 25 that is used to process a semiconductor substrate 30. The temperature control system 10 comprises a vapor chamber 100 that forms an enclosure adjoining or surrounding the process chamber surface 15. A fluid distributor 115 in the vapor chamber 100 applies a fluid film 130 onto the process chamber surface 15. Vaporization of the fluid film 130 from the chamber surface 15 controls the temperature of the chamber surface. Optionally, a vent 165 in the vapor chamber 100 can be used to adjust the vaporization temperature of the fluid in the vapor chamber.

Temperature control system for semiconductor process chamber

Growing community of inventors

San Jose, CA, United States of America

Efrain Quiles