Asm Nutool, Inc.

Areesys Technologies, Inc.

Nutool, Inc.

Efrain A Velazquez

Douglas W Young

Bulent Mehmet Basol

Yuchun Wang

Kai-An Wang

Albert Ting

Homayoun Talieh

Craig W Marion

Mukesh Desai

Vulf Perlov

Michael Z Wong

Bernard Frey

Wen-Chieh Geoffrey Lee

Jeffrey A Bogart

Tuan Truong

Hongwei Lu

Xiaoyan Zhang

Bernard M Frey

Daliang Wang

Brett E McGrath

Jingru Sun

A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has grounding electrodes and grounding pads located at edges, and a thin film covering the grounding electrodes but exposing the grounding pads. The workpiece carrier has carrier electrodes located around the workpiece and inside grounding ports at the bottom. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a Z-elevator to raise the workpiece carrier toward the poling source using the grounding ports, and grounding mechanisms including downwardly biased electrical contacts which, when the workpiece carrier is raised by the Z-elevator, connect the grounding pads of the workpiece with the carrier electrodes, to ground the workpiece. The poling apparatus additionally includes preparation platform and transfer platform with conveyer systems with rollers and Z-elevators to move the workpiece carrier in and out of the poling chamber.

Method and apparatus for poling polymer thin films

A corona polarization (also denoted 'poling') process and associated apparatus polarizes a ferroelectric polymer thin film while monitoring and evaluating a substrate current whose magnitude, slope and noise profile (Barkhausen noise) varies in accordance with phase transformation processes of crystallites within the film and, thereby, provides an indication of the polarization status. The electric current flowing through the microstructures of the thin film can be modeled by an equivalent circuit, within which electrical charges stored in the respective microstructures are denoted by a plurality of discrete components (e.g., capacitors). Alternatively, the process can be modeled in terms of a hysteresis loop of polarization vs. electric field, corresponding to the availability of recombination sites on the thin-film surface. By comparing the measured substrate current to the result derived from the equivalent circuit, the major processing parameters such as poling current and voltage can be adjusted via an in-situ manner throughout the corona poling process and an accurate process endpoint can be established. As a consequence, a ferroelectric thin film is fabricated that has an enhanced piezoelectric effect yet minimized aging problems.

Controlled thin-film ferroelectric polymer corona polarizing system and process

A deposition system includes a magnetron sputter deposition source that includes a backing frame that includes a window and a closed loop around the window. The backing frame includes inside surfaces towards the window, one or more sputtering targets mounted on inside surfaces of the backing frame, and one or more magnets mounted on outside surfaces of the backing frame. The one or more sputtering targets include sputtering surfaces that define internal walls of the window. The one or more magnets can produce a magnetic field near the one or more sputtering surfaces. A substrate includes a deposition surface oriented towards the window in the backing frame. The deposition surface receives sputtering material(s) from the one or more sputtering targets.

Film deposition apparatus with low plasma damage and low processing temperature

In one aspect, the present invention monitors a signal corresponding to a torque value of a motor that is used to maintain relative motion between a conductive top surface of a workpiece and a workpiece surface influencing device in the presence of physical contact between the conductive top surface of the workpiece and the workpiece surface influencing device. In another aspect, the present invention uses the signal to control a force applied to a top conductive surface of a workpiece during electrotreatment.

Method for monitoring and controlling force applied on workpiece surface during electrochemical mechanical processing

A sensing apparatus for detecting a processing endpoint of a multi-layer semiconductor wafer includes a light source to emit light against a surface of the semiconductor wafer, a color sensor to sense a reflection color from the surface of the semiconductor wafer in response to the incident light and to generate a sensor signal, and a decision circuit coupled to the color sensor and configured to decide whether the wafer processing endpoint has been reached based at least in part on the sensor signal. In another embodiment, a sensing apparatus is coupled to a movable structure to position the sensing apparatus to sense the surface of the semiconductor wafer.

Endpoint detection for non-transparent polishing member

The present invention describes a chemical mechanical polishing apparatus and method that uses a portion of a polishing pad that is disposed under tension between a supply spool and a receive spool, with a motor providing the tension to either the supply spool or the receive spool and the other spool being locked during processing. If a new section of the polishing pad is needed, the same motor that provided the tension is used to advance the polishing pad a determined amount. Further, during processing, a feedback mechanism is used to ensure that the tension of the polishing pad is consistently maintained.

Advanced Bi-directional linear polishing system and method

The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical processing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.

Chemical mechanical polishing endpoint detection

An apparatus for polishing a workpiece includes a workpiece holder configured to hold the workpiece, a polishing member configured to be positioned adjacent to a face of the workpiece in order to polish the workpiece face with a front side of the polishing member, and a platen having a plurality of pressure zones configured to selectively apply pressure to the polishing member thereby causing the polishing member to contact the workpiece face with selective pressure. In another embodiment, the apparatus includes a pressure controller coupled to the platen and configured to selectively adjust the pressure zones.

Advanced chemical mechanical polishing system with smart endpoint detection

Pad tensioning method and system in a bi-directional linear polisher

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San Jose, CA, United States of America

Efrain A Velazquez