Globalfoundries Singapore Pte. Ltd.

Globalfoundries Inc.

Ee Jan Khor

Juan Boon Tan

Ramasamy Chockalingam

Wanbing Yi

Fook Hong Lee

Guowei Zhang

Sung Mun Jung

Wei-Hui Hsu

Wenhu Liu

Qian Chen

Suleni Tunggal Mulia

Yongmei Hu

Chun-I Hsieh

Chin Leng Ko

Yong Wah See

The present disclosure relates to semiconductor structures and, more particularly, to capacitor structures and methods of manufacture. The structure includes: an airgap provided within a dielectric material; an insulator material across a top of the airgap and on a surface of the dielectric material; and a capacitor provided within the dielectric material and lined with the insulator material.

Capacitor and airgap structure

The present disclosure generally relates to trench isolation structures for semiconductor devices. More particularly, the present disclosure relates to semiconductor devices having trench isolation structures with varying depths for electrically isolating integrated circuit (IC) components in the semiconductor devices. The present disclosure also relates to method of forming the trench isolation structures.

Trench isolation structures with varying depths and method of forming the same

The disclosed subject matter relates generally to methods of forming a semiconductor device, such as a moisture sensor. More particularly, the present disclosure relates to a method of forming a sensor device and a bond pad in the same dielectric region. The present disclosure also relates to the semiconductor devices formed by the method disclosed herein.

Method of forming a sensor device having moisture sensitive dielectric layer with integrally formed projections

The disclosed subject matter relates generally to methods of forming a semiconductor device, such as a moisture sensor. A plurality of electrodes and a bond pad are formed in a dielectric region. A passivation layer is formed on each electrode in the plurality of electrodes and the bond pad. A barrier layer is formed on the passivation layer. A plurality of trenches are formed to extend through the barrier layer and into the dielectric region. Formation of the trenches simultaneously exposes an upper surface of the bond pad. A moisture sensitive dielectric layer is formed on the barrier layer. Formation of the moisture sensitive dielectric layer also fills the trenches to form a plurality of projections, each projection being formed between two electrodes in the plurality of electrodes.

Method of forming a sensor device

Device and method for forming a device are presented. A substrate having circuit component and a back-end-of-line (BEOL) dielectric layer with interconnects is provided. A pad dielectric layer is formed over the BEOL dielectric layer. The pad dielectric layer includes a pad via opening which exposes a surface of one of the interconnects in the BEOL dielectric layer. A pad interconnect is formed on the pad dielectric layer and the pad interconnect is coupled to one of the interconnect in the BEOL dielectric by a pad via contact in the pad via opening. The pad interconnect comprises a pad interconnect pattern which is devoid of 90&#xb0; angles and any angled structures contained in the pad interconnect pattern less than 90&#xb0;. A passivation layer is formed on the substrate. The passivation layer lines the pad interconnect and covers an exposed surface of the pad dielectric layer.

Reliable passivation for integrated circuits

Devices are formed to have inner layers that have electronic devices, and an outer passivation layer. A patterned conductor is formed on a first surface of the inner layers, and through conductors (that extend through interior insulator layers) are positioned to electrically connect the patterned conductor to the electronic devices. The patterned conductor includes a pattern of connected linear sections that are parallel to the first surface of the inner layers. The linear sections of the patterned conductor meet at conductor corners, and at least one of the conductor corners of the patterned conductor includes a chamfer side that terminates at the linear sections. Further, the chamfer side is not perfectly diagonal, but instead forms unequal angles with the linear sections that intersect to form the corner.

Chamfering for stress reduction on passivation layer

A method of forming a stop layer to prevent dummy vias from connecting to a metal layer and the resulting device are provided. Embodiments include forming a first metal layer in a first dielectric layer; forming a second dielectric layer over a first Nblok layer formed over the first dielectric and first metal layers; forming a third dielectric layer over the second dielectric layer and a second Nblok layer formed over a portion of the second dielectric layer; forming a via and a plurality of vias through the third and second dielectric layers down to the second and first Nblok layers, respectively; removing portions of the second and first Nblok layers through the via and the plurality of vias down to the second dielectric layer and the first metal layer, respectively; removing portions of the third dielectric layer through each via; and filling each via with a second metal layer.

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Singapore, Singapore

Ee Jan Khor