Micron Technology Incorporated

Ee Ee Eng

Kunal Shrotri

Anish A Khandekar

Fei Wang

Jie Li

Jeffery B Hull

Zhixin Xu

Dong Liang

Duo Mao

A method of forming SiN, where 'x' is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising SiN, where 'x' is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man

Methods of forming sin, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods

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Boise, ID, United States of America

Ee Ee Eng