Asml Netherlands B.v.

Carl Zeiss Smt Gmbh

Asml Holding N.v.

Vision Dynamics Holding B.v.

Edwin Te Sligte

Dirk Heinrich Ehm

Johannes Hubertus Josephina Moors

Marcus Adrianus Van De Kerkhof

Andrey Alexandrovich Nikipelov

Bastiaan Theodoor Wolschrijn

Thomas Stein

Arnold Storm

Vadim Yevgenyevich Banine

Johannes Henricus Wilhelmus Jacobs

Richard Joseph Bruls

Yang-Shan Huang

Olav Waldemar Vladimir Frijns

Laurentia Johanna Huijbregts

Andrea Illiberi

Stefan-Wolfgang Schmidt

Jeroen Huijbregtse

Moritz Becker

Ronald Peter Albright

Manish Ranjan

Alexey Sergeevich Kuznetsov

Zhuangxiong Huang

Irene Ament

Christian Gerardus Norbertus Hendricus Marie Cloin

Kursat Bal

Hugo Anton Marie De Haan

Hermanus Hendricus Petrus Theodorus Bekman

Parham Yaghoobi

Dries Smeets

Antonius Hubertus Van Schijndel

Arnoldus Jan Storm

Mark Zellenrath

Paulus Petrus Maria Blom

Ferdinandus Martinus Jozef Henricus Van De Wetering

Alquin Alphons Elisabeth Stevens

Karl Robert Umstadter

Nicolaas Cornelis Josephus Van Hijningen

Tom Huiskamp

Sjoerd Frans De Vries

Thomas Maarten Raasveld

Eray Uzgören

Vadim Yevgenyevich Joseph Banine

Tina Graber

Georgi Nenchev Nenchev

Fred Roozeboom

Edgar Osorio

Yves Lodewijk Maria Creijghton

Hella Logtenberg

An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.

Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris

A method for at least partially removing a contamination layer () from an optical surface () of an optical element () that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer () from the optical surface (), which, in turn, includes: exposing the contamination layer () to a surface-modifying reactant () in a surface modification step, and exposing the contamination layer () to a material-detaching reactant () in a material detachment step. The optical element () is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface () of the optical element () is exposed to EUV radiation (), during which the contamination layer () is formed.

Method for removing a contamination layer by an atomic layer etching process

A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.

Component for use in a patterning device environment

An optical element (), comprising: a substrate (), an EUV radiation reflecting multilayer system () applied to the substrate, and a protective layer system () applied to the multilayer system and having at least a first and a second layer (). The first layer () is arranged closer to the multilayer system () than is the second layer () and serves as a diffusion barrier for hydrogen. This first layer () has a lower solubility for hydrogen than does the second layer (), which serves for absorbing hydrogen. Also disclosed are an optical system for EUV lithography with at least one such optical element, and a method for treating an optical element in order to remove hydrogen incorporated in at least one layer () of the protective layer system and/or in at least one layer () of the multilayer system ().

Optical element and optical system for EUV lithography, and method for treating such an optical element

An EUV lithography system () includes: at least one optical element () having an optical surface () arranged in a vacuum environment () of the EUV lithography system (), and a feed device () for feeding hydrogen into the vacuum environment (), in which at least one silicon-containing surface () is arranged. The feed device () additionally feeds an oxygen-containing gas into the vacuum environment () and has a metering device () that sets an oxygen partial pressure (p) at the at least one silicon-containing surface () and/or at the optical surface ().

EUV lithography system and operating method

Device for generating a plasma discharge near a substrate for patterning the surface of the substrate, comprising a first electrode having a first discharge portion and a second electrode having a second discharge portion, a high voltage source for generating a high voltage difference between the first and the second electrode, and positioning means for positioning the first electrode with respect to the substrate. The device is further provided with an intermediate structure that is, in use, arranged in between the first electrode and the substrate while allowing for positioning the first electrode with respect to the substrate.

Device and method for generating a plasma discharge for patterning the surface of a substrate

The invention is directed to a method for at least partially removing a contamination layer () from an optical surface () of an EUV-reflective optical element () by bringing a cleaning gas into contact with the contamination layer. In the method, a jet () of cleaning gas is directed to the contamination layer () for removing material from the contamination layer (). The contamination layer () is monitored for generating a signal indicative of the thickness of the contamination layer () and the jet () of cleaning gas is controlled by moving the jet () of cleaning gas relative to the optical surface () using this signal as a feedback signal. A cleaning arrangement (to) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet () of cleaning gas and to a corresponding cleaning gas generation arrangement.

Method for removing a contamination layer from an optical surface and arrangement therefor

Method for removing a contamination layer from an optical surface and arrangement therefor as well as a method for generating a cleaning gas and arrangement therefor

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Eindhoven, Netherlands

Edwin Te Sligte