United States of America As Represented by the Secretary of the Air Force

The University of New Mexico

Edward W Taylor

Marek A Osinski

Petr G Eliseev

Method and apparatus embody a rotation sensor including one or more ring lasers designed to utilize a nonlinear Sagnac effect, a passive waveguide arrangement, and a photodetector arrangement to receive the outcoupled light and to detect rotation of the sensor; wherein these components are arranged into a monolithically integrated optoelectronic integrated circuit on a single substrate. The method and apparatus can include seeding a stable, rotation -insensitive, strong (driving) wave using a single-frequency edge emitting laser monolithically integrated on the same substrate.

Rotation-sensitive semiconductor ring laser device using the nonlinear Sagnac effect

A monolithically integrated semiconductor laser rotation sensor/gyroscope that includes at least two isolated, nonsynchronized semiconductor lasers; at least one being unidirectional and at least a further one being either a straight-line laser or a second unidirectional ring laser configured to propagate lasing light waves in the direction opposite to the first unidirectional ring laser; semiconductor directional waveguide couplers; a semiconductor Y-junction mixing region; and a semiconductor photodetector. Evanescently outcoupled signals are routed to a photodetector for detection of the Sagnac shifted frequencies to discern a beat frequency resulting from rotation of the chip structure. The straight-line semiconductor laser serves as frequency reference insensitive to rotation. Directing, filtering, and radiating unwanted reflections or backscattered light to highly absorbing regions is carried out with waveguide coupler designs and nonreciprocal couplers and filters.

Monolithically integrated semiconductor unidirectional ring laser rotation sensor/gyroscope

The disclosed method is for radiation testing of a nanostructure photonic device under test (DUT). The method comprises the application of a beam of optical energy to the DUT, and then establishing a computer data base for the performance of the device under test during the application of the beam. Thereafter, a tightly focused, steerable radiation beam is generated and focused on to a selected nano sized area of the DUT. A second data base is established for the performance of the DUT resulting from the application of the radiation beam, and the data of the first data base are compared with the data of said second data base to determine the affects of applying the radiation beam to the DUT, or to alter the device physical properties such as its refractive indicies, absorption, preferred polarization, and electrooptic characteristics, including electrooptic coefficients, photoelastic constants, operational (fundamental) wavelength and coupling coefficients.

Method for microbeam ion radiation testing of photonic devices

A plated through-hole conductor structure for a multiple layer laminate electronic printed wiring board includes mechanical locking of the plated through conductor with textured conductor surfaces together with use of etching or other processing to provide laminate internal space for the mechanical locking structure. A manufacturing sequence and plural material selections are also disclosed.

Growing community of inventors

Albuquerque, NM, United States of America

Edward W Taylor