International Business Machines Corporation

Edward W Seibert

Peter Anton Habitz

Douglas Wayne Kemerer

L William Dewey, Iii

Lijiang L Wang

Judith H McCullen

John J Ellis-Monaghan

Michael J Sullivan

William F DeCamp

William C Bakker

A method comprises tracing a first and second terminal of a junction through a circuit layout to associated power supplies to determine their respective defined bias values. The method further comprises comparing the defined bias values of each terminal in order to determine, based on the comparison, whether the junction is forward biased.

Identifying parasitic diode(s) in an integrated circuit physical design

A method and structure for performing parasitic extraction for a multi-fingered device comprising of establishing a maximum processing width of a finger of the device, dividing fingers of the device that exceed the maximum width into sub-fingers, determining whether ones of the fingers and the sub-fingers have similar characteristics, combining ones of the fingers and the sub-fingers that have similar characteristics into combined fingers, and extracting parasitic values from the fingers, the sub-fingers and the combined fingers.

Method of performing parasitic extraction for a multi-fingered transistor

A method and structure for performing capacitance extraction during the design of an integrated circuit includes inputting a specified wiring density and design requirements, determining a minimum spacing for wire segments based on the design requirements, calculating a transparency factor based on the wiring density, calculating a lateral capacitance assuming virtual wires are present in the integrated circuit, and calculating a vertical capacitance based on the transparency factor.

Inclusion of global wires in capacitance extraction

A method and structure for a method of determining characteristics of parasitic elements in an integrated circuit comprising, identifying manufacturing process parameters of devices in the integrated circuit, calculating a parasitic performance distribution for each of the devices based on the manufacturing process parameters, combining the parasitic performance distribution for each of the devices into a net parasitic value, and forming a parameterized model based on the net parasitic values.

Process and system for maintaining 3 sigma process tolerance for parasitic extraction with on-the-fly biasing

According to the present embodiment, a method for calculating the parasitic capacitance in a semiconductor device is disclosed. According to the preferred method, a layout file containing the shapes of a semiconductor device is provided. The dimensions of the layout file are then adjusted to wafer dimensions so as reflect actual production devices. The shapes of the layout file are then partitioned into simpler shapes, typically abutted rectangles, called tiles. Each tile is then decomposed into overlap and fringe capacitance components, each component having a uniform capacitance environment with respect to its capacitance elements. The parasitic capacitance of the semiconductor device can thus be accurately computed, with an efficient use of resources. Additionally the preferred embodiment is easily adaptable to a wide range of technology types.

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Williston, VT, United States of America

Edward W Seibert