Varian Semiconductor Equipment Associates, Inc.

Diamond Semiconductor Group, LLC

Edward W Bell

Frank Sinclair

Joseph C Olson

Nicholas R White

William Davis Lee

Svetlana Radovanov

Costel Biloiu

Daniel R Tieger

Robert C Lindberg

James Paul Buonodono

James S Buff

Piotr R Lubicki

Charles M McKenna

Douglas A Brown

Manny Sieradzki

Philip Harvey

Danielle Feldman

An apparatus to control a ribbon ion beam. The apparatus may include a coil assembly comprising a plurality of electromagnetic coils configured to generate a magnetic field proximate the ribbon beam, the magnetic field extending in a first direction that forms a non-zero angle with respect to a direction of propagation of the ribbon ion beam; a current source assembly configured to supply current to the coil assembly; and a controller configured to control the current source assembly to send at least one dithering current signal to the coil assembly responsive to a beam current measurement of the ribbon ion beam, wherein the at least one dithering current signal generates a fluctuation in magnetic field strength of the magnetic field.

Apparatus and method to control an ion beam

An apparatus an ion beam generator to provide an ion beam. A scanning system may receive the ion beam and provide a scanned beam. An electrode may receive the scanned beam. At least a portion of the electrode is normal to a propagation direction of the scanned beam. The portion of the electrode that is normal to the propagation direction the scan beam may have a curved shape.

Curved post scan electrode

An electrostatic scanner to scan an ion beam in an ion implanter. The electrostatic scanner may include a first scan plate having a first inner surface that faces the ion beam, the first inner surface having a concave shape in a first plane that is perpendicular to a direction of propagation of the ion beam, and a second scan plate opposite the first scan plate separated by a gap to accept the ion beam the second scan plate having a second inner surface that faces the ion beam and a convex shape in the first plane, the first scan plate and second scan plate configured to generate an electrostatic field in the gap to scan the ion beam back and forth along a horizontal direction perpendicular to the direction of propagation of the ion beam.

Apparatus and techniques for controlling ion angular spread

A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side, and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.

Inductively coupled plasma ion source with multiple antennas for wide ion beam

An ion accelerating device includes a series of bushing units and a series of resistor circuit units. Each resistor circuit unit is coupled to one bushing unit. A bushing unit includes three integrated conductors to establish connections to the coupled resistor circuit unit and to an immediately adjacent bushing unit such that a voltage to the bushing unit may be degraded by the resistor circuit unit before reaching the lens and that two bushing units may contact one another directly.

Bushing unit with integrated conductor in ion accelerating device and related method

An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.

Ion implanter having two-stage deceleration beamline

An apparatus is provided for one-dimensional magnetic scanning or switching of a charged particle beam. The apparatus can be extended to two dimensions at the cost of added complexity.

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Newbury, MA, United States of America

Edward W Bell