Qc Solutions, Inc.

Edward Tsidilkovski

Kenneth Steeples

The invention relates to the use of the metrology methods and the related apparatus disclosed herein that incorporate thermal treatment devices and methods that improve defect detection. Specifically, in one aspect the invention relates to method of thermally treating a semiconductor wafer such that an acceleration of interstitial defect migration is achieved while leaving vacancy defects substantially unaltered.

Apparatus and method of measuring defects in an ion implanted wafer by heating the wafer to a treatment temperature and time to substantially stabilize interstitial defect migration while leaving the vacancy defects substantially unaltered.

An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

Growing community of inventors

Chelmsford, MA, United States of America

Edward Tsidilkovski