Qorvo Us, Inc.

Rf Micro Devices, Inc.

Edward T Spears

Ali Tombak

Daniel Charles Kerr

Marcelo Jorge Franco

Jason Stutzman

Nadim Khlat

Baker P Scott

Julio C Costa

Ruediger Bauder

Michael Carroll

Philippe Gorisse

Christian Rye Iversen

Jean-Frederic Chiron

Jon D Jorgenson

Michael F Zybura

John Robert Siomkos

Douglas Andrew Teeter

Philip W Mason

Toshiaki Moriuchi

Victor E Steel

Khoi Tam Vu

Wolfram C Stiebler

Hien D Bui

Jongsoo Lee

Mikyung Cho

Mark Crandall

The present disclosure relates to a double-sided integrated circuit (IC) module, which includes an exposed semiconductor die on a bottom side. A double-sided IC module includes a module substrate with a top side and a bottom side. Electronic components are mounted to each of the top side and the bottom side. Generally, the electronic components are encapsulated by a mold compound. In an exemplary aspect, a portion of the mold compound on the bottom side of the module substrate is removed, exposing a semiconductor die surface of at least one of the electronic components.

Double-sided integrated circuit module having an exposed semiconductor die

A power amplifier linearization circuit and related apparatus is provided. In examples disclosed herein, the power amplifier linearization circuit includes an analog pre-distortion (APD) circuit coupled to an input of a power amplifier. Notably, the power amplifier can exhibit linearity response deviation, namely linearity amplitude response deviation and linearity phase response deviation, when amplifying a radio frequency (RF) signal under a compression condition. As such, the APD circuit is configured to receive a control signal corresponding to the linearity response deviation and pre-process the RF signal based on the control signal before providing the RF signal to the power amplifier. As a result, it may be possible to reduce the linearity response deviation in the power amplifier, thus helping to improve linearity and RF performance of the power amplifier.

Power amplifier linearization circuit and related apparatus

An antenna element and related apparatus are provided. The antenna element includes a radiating structure configured to radiate a radio frequency (RF) signal in a defined polarization (e.g., linear polarization or circular polarization). The radiating structure is conductively coupled to a first pair of feed ports and a second pair of feed ports. In examples discussed herein, at least one selected pair of feed ports among the first pair of feed ports and the second pair of feed ports can be dynamically configured to receive a differential signal(s). By applying the differential signal(s) to the selected pair of feed ports with a proper polarity and/or a relative phase differential, it may be possible to cause the radiating structure to radiate in the defined polarization without requiring additional circuitries (e.g., switching circuit), thus helping to reduce power consumption, heat dissipation, and/or footprint in an apparatus employing the antenna element.

Antenna element and related apparatus

The present disclosure relates to a reconfigurable patch antenna, which includes a substrate, a ground plane formed on a bottom surface of the substrate or within the substrate, a primary patch, an extension patch, and switching components. The primary patch and the extension patch are formed on a top surface of the substrate and are placed parallel to each other. Herein, a gap is formed between the primary patch and the first extension patch. The switching components are formed across the gap, electrically coupled to both the primary patch and the extension patch, and configured to connect the primary patch to the extension patch or disconnect the primary patch from the extension patch.

Reconfigurable patch antenna and phased array

Disclosed is radio frequency switch circuitry that includes a switch branch having a first branch terminal coupled to a first signal port and a second branch terminal coupled to a second signal port, and a branch control terminal, wherein the switch branch has both an on-state and an off-state to control passage of a radio frequency signal between the first signal port and the second signal port in response to a control signal applied to the control terminal. The radio frequency switch circuitry further includes an isolation inductor coupled between the first branch terminal and the second branch terminal such that the isolation inductor is in parallel with the switch branch, wherein the isolation inductor has a given inductance that provides resonance with a total off-state capacitance of the switch branch in the off-state at a center frequency of the radio frequency signal.

Radio frequency switch branch circuitry

A radio frequency switch system includes a plurality of radio frequency switch circuitries that each include a switch branch coupled between a first branch terminal and a second branch terminal and are configured to allow passage of a radio frequency signal through the switch branch in an on-state and to block the radio frequency signal from passing through the switch branch in an off-state in response to a control signal applied to a branch control terminal of the switch branch. Also included is a switch controller configured to apply the control signal to the branch control terminal of the switch branch of each of the plurality of radio frequency switch circuitries, wherein the control signal has a first voltage level that places the switch branch in the on-state and a second voltage level that places the switch branch in the off-state without digital signal decoding of the control signal.

Radio frequency switch system

Radio frequency switch circuitry is disclosed having first and second port terminals, a switch branch having first and second branch terminals, and a branch control terminal, wherein the switch branch is configured to pass an RF signal between the first and second branch terminals in an on-state and block the RF signal from passing between the first and second branch terminals in an off-state in response to a control signal that is coupled with the RF signal and received at the first port terminal. Control signal decoupling circuitry has a control signal input terminal coupled to the first port terminal to receive the control signal coupled to the RF signal and a control signal output terminal coupled to the branch control terminal, wherein the control signal decoupling circuitry is configured to decouple the control signal from the RF signal and provide the control signal to the branch control terminal.

Radio frequency switch circuitry

The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.

Semiconductor radio frequency switch with body contact

The present disclosure relates to an RF power amplifier (PA) power supply that includes a series pass circuit coupled across a direct current (DC)-to-DC converter to receive a power supply input signal, such as provided from a battery, to provide a power supply output signal to at least a first RF PA based on an output setpoint. Control circuitry selects between a switching supply operating mode and a non-switching supply operating mode based on the output setpoint. During the switching supply operating mode, the DC-to-DC converter provides the power supply output signal and during the non-switching supply operating mode, the series pass circuit provides the power supply output signal.

High-efficiency low-cost power supply for radio frequency systems

The present disclosure relates to RF power amplifier circuitry that may operate as either a Class AB amplifier or as a Class B amplifier based on a magnitude of RF output power provided by the RF power amplifier circuitry. A transistor bias circuit in the RF power amplifier circuitry may control transitioning between operating as the Class AB amplifier and operating as the Class B amplifier. When the magnitude of the RF output power is below a first threshold, the RF power amplifier circuitry may operate as a Class AB amplifier, and when the magnitude of the RF output power is above the first threshold, the RF power amplifier circuitry may operate as a Class B amplifier.

Bias-based linear high efficiency radio frequency amplifier

The present disclosure relates to RF power amplifier circuitry that may include a source termination circuit, a load termination circuit, or both used in an unconventional manner to shape amplitude-based amplitude modulation (AM-AM) distortion, amplitude-based phase modulation (AM-PM) distortion, or both to extend a linear operating range of the RF power amplifier circuitry. Conventional RF power amplifier circuitry may operate as a Class F RF power amplifier, which may use termination circuits to create impedance valleys at even harmonics of an RF carrier frequency to improve a saturated efficiency of the RF power amplifier circuitry. However, the termination circuits of the present disclosure may create impedance valleys that are not at even harmonics of an RF carrier frequency to shape amplitude-based distortion, thereby extending a linear operating range of the RF power amplifier circuitry.

Termination circuit based linear high efficiency radio frequency amplifier

The present invention is a parallel RF amplifier circuit that selects between a high power side (HPS) and a low power side (LPS), depending upon output power. A chain matching network couples an LPS output to an HPS output for improved efficiency at lower output power. When the HPS is selected, the LPS output is disabled, and when the LPS is selected, the HPS output is disabled When the HPS is selected, large signal voltage swings from the collector of the HPS amplifier may be multiplied through the chain matching network, and may cause negative voltage swings at the LPS collector, which may degrade linearity and efficiency of the HPS amplifier by driving currents into the disabled LPS amplifier. Therefore, the present invention includes LPS bias circuitry to minimize impacts of negative voltage swings at the LPS output.

Radio frequency parallel amplifier

A two stage power amplifier circuit that employs both a DC to DC converter and sliding bias controller to improve power amplifier efficiency. The control signal that is generated by the power detector circuit to control the input voltage to the DC to DC converter is also used to provide the reference voltage that controls the sliding bias controller. The sliding bias controller reduces the quiescent current of the power amplifiers by reducing the bias currents, and thus the DC voltage at lower power output levels driving the power amplifiers. This causes the power amplifiers to operate at or near higher efficiency Class B operation at lower power output levels. As the power level increases, the sliding bias controller reduces its control on the bias currents so that the power amplifier can be driven at necessary higher power output levels.

Sliding bias controller for use with radio frequency power amplifiers

A high efficiency multiple power level power amplifier has a PIN diode network that selectively associates an impedance transformation network with an interstage impedance matching network to maintain desired gain and linearity characteristics for the power amplifier at different output power levels. The PIN diode network in the off mode (high power), has a high breakdown voltage and high series resistance thereby reducing distortion components. The PIN diode network in the on mode (low power), has a low series resistance thereby reducing insertion losses.

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Stokesdale, NC, United States of America

Edward T Spears