Intel Corporation

Shenzhen Xiuyuan Electronic Technology Co., Ltd

Shenzhen Xluyuan Electronic Technology Co., Ltd

Edward Rudolph Prack

Danish Faruqui

Chuan Hu

Tony Dambrauskas

Junjun Liu

Yuejin Guo

Robert M Nickerson

James G Maveety

Mihir A Oka

Aleksandar Aleksov

Robert L Sankman

Gregory Martin Chrysler

Sairam Agraharam

Yoshihiro Tomita

Leonel R Arana

Thomas Dory

Dingying David Xu

Sandeep Razdan

Mark S Hlad

Shan Zhong

Lilia May

Unnikrishnan Vadakkanmaruveedu

Lars D Skoglund

Rahul N Manepalli

Saikumar Jayaraman

Carl L Deppisch

Ashay A Dani

Anna M Prakash

Mukul P Renavikar

Mohit Mamodia

Rajen S Sidhu

Sergei L Voronov

Rajen C Dias

Thomas J De Bonis

Srinivasa R Aravamudhan

Jason Jieping Zhang

James C Matayabas

Chang Lin

David K Wilkinson, Jr

Larry E Mosley

Javier Soto Gonzalez

Xavier Francois Brun

Rajendra C Dias

Amram Eitan

Tyler N Osborn

Timothy A Gosselin

Kabirkumar Mirpuri

David Q Xu

Anil R Indluru

Rob Nickerson

Lim Chong Sim

Sudhakar N Kulkarni

Javier S Gonzalez

An integrated circuit packaging method and an integrated packaging circuit, the integrated circuit packaging method including: circuit layers are provided on the top surface of a substrate, the bottom surface of the substrate or the interior of the substrate, the circuit layers having circuit pins; the substrate is provided with connection through holes, and the connection through holes are joined up with the circuit pins; a device is placed on the substrate, and the device is provided with device pins on a surface facing the substrate, which makes the device pins join up with a first opening of the connection through holes; conductive layers are fabricated in the connection through holes by means of a second opening of the connection through holes; and the conductive layers electrically connect the device pins to the circuit pins.

Integrated circuit packaging method and integrated packaging circuit

An integrated circuit packaging structure and method are provided, the integrated circuit packaging structure includes: a substrate, the substrate being provided with a circuit layer and fine wiring; a chip, the chip being provided with a fine pin and a chip pin; the substrate is provided with at least two of said chips, a chip pin of at least one of said chips being electrically connected to the circuit layer; an insulation patch, the fine wiring being provided on the insulation patch, while the fine pin of the chip is electrically connected to the fine wiring, at least two of said chips being directly electrically connected by means of the fine wiring.

Integrated circuit packaging structure and method

An integrated circuit system and a packaging method therefor are disclosed. The method includes providing a first carrier and a second carrier oppositely, with a first device set of the first carrier and a second device set of the second carrier both located between the first and second carriers, providing a molding material between the first and second carriers to make the first and second device sets respectively in contact with the molding material, curing the material to make the first and second device sets respectively mounted at two sides of the molding material, making the first and second carriers detached from the first device set and the molding material and from the second device set and the molding material respectively; and forming connection holes in the molding material and fabricating a conductive layer which extend into the connection holes to electrically connect the first and second device sets.

Integrated circuit system and packaging method therefor

An integrated circuit packaging method, including: a top surface of a substrate, a bottom surface of the substrate, or the interior of the substrate is provided with circuit layers, and the circuit layers are provided with circuit pins; a component element is mounted on the substrate, and a surface of the component element facing the substrate is provided with component pins; connection through holes are formed on the substrate, the connection through holes are made to abut on the circuit pins, and a first opening of the connection through holes is abutted on the component pins; conductive layers are fabricated inside of the connection through holes by means of a second opening of the connection through holes, and the conductive layers electrically connect the component pins with the circuit pins.

Integrated circuit packaging method and integrated packaged circuit

An integrated circuit multichip stacked packaging structure and method, including: first pins, provided at bottom surface of first chip; second pins, provided at top surface of second chip; circuit layers, provided at top surface of substrate, and/or circuit layers, provided at bottom surface of substrate, and/or circuit layers, provided within substrate; first chip, provided at top surface of substrate; second chip, provided at top surface of first chip; first pin is electrically connected at least to one of circuit layers provided with circuit pins, substrate is provided with connecting through hole, which is docked with circuit pin, first opening thereof is docked with first pin, second opening thereof is operating window, electrically-conductive layer is provided within connecting through hole, and electrically connects first pin to circuit pin; second pin is electrically connected at least to one of circuit layers; second pin is electrically connected to circuit layer via electrically-conductive layer.

Integrated circuit multichip stacked packaging structure and method

Methods/structures of joining package structures are described. Those methods/structures may include forming a metal formate on a surface of a first solder interconnect structure disposed on a first package substrate at a first temperature, and attaching a second solder interconnect structure disposed on a second package substrate to the first solder interconnect structure at a second temperature. The second temperature decomposes at least a portion of the metal formate and generates a hydrogen gas. The generated hydrogen gas removes an oxide from the second solder interconnect structure during joint formation at the second temperature.

Methods of forming joint structures for surface mount packages

Embodiments of the present disclosure are directed towards techniques and configurations of interconnect structures having a polymer core in integrated circuit (IC) package assemblies. In one embodiment, an apparatus includes a first die having a plurality of transistor devices disposed on an active side of the first die and a plurality of interconnect structures electrically coupled with the first die, wherein individual interconnect structures of the plurality of interconnect structures have a polymer core, and an electrically conductive material disposed on the polymer core, the electrically conductive material being configured to route electrical signals between the transistor devices of the first die and a second die. Other embodiments may be described and/or claimed.

Interconnect structures with polymer core

Embodiments of the present disclosure are directed toward formation of solder and copper interconnect structures and associated techniques and configurations. In one embodiment, a method includes providing an integrated circuit (IC) substrate and depositing a solderable material on the IC substrate using an ink deposition process, a binder printing system, or a powder laser sintering system. In another embodiment, a method includes providing an integrated circuit (IC) substrate and depositing a copper powder on the IC substrate using an additive process to form a copper interconnect structure. Other embodiments may be described and/or claimed.

Formation of solder and copper interconnect structures and associated techniques and configurations

An apparatus is described that includes a substrate and a mold compound disposed on the substrate. The semiconductor die is embedded within the mold compound and is electrically coupled to lands on the substrate. Solder balls are disposed around the semiconductor die on the substrate. Each of the solder balls have a solid coating thereon. The solid coating contains a cleaning agent to promote its solder ball's coalescence with another solder ball. Respective vias are formed in the mold compound that expose the solder balls and their respective solid coatings. In combined or alternate embodiments outer edges of the mold compound have smaller thickness than regions of the mold compound between the vias and the semiconductor die. In combined or alternate embodiments micro-channels exist between the solder balls and the mold compound.

Package structure to enhance yield of TMI interconnections

Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or 'inactive' side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

Laser die backside film removal for integrated circuit (IC) packaging

Electronic assemblies and their manufacture are described. One embodiment relates to a method including depositing an organic thin film layer on metal bumps on a semiconductor wafer, the organic thin film layer also being formed on a surface adjacent to the metal bumps on the wafer. The wafer is diced into a plurality of semiconductor die structures, the die structures including the organic thin film layer. The semiconductor die structures are attached to substrates, wherein the attaching includes forming a solder bond between the metal bumps on a die structure and bonding pads on a substrate, and wherein the solder bond extends through the organic thin film layer. The organic thin film layer is then exposed to a plasma. Other embodiments are described and claimed.

Organic thin film passivation of metal interconnections

Introducing an underfill material over contact pads on a surface of an integrated circuit substrate; and ablating the introduced underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation. A method including first ablating an underfill material to expose an area of contact pads on a substrate using temporally coherent electromagnetic radiation; introducing a solder to the exposed area of the contact pads; and second ablating the underfill material using temporally coherent electromagnetic radiation. A method including introducing an underfill material over contact pads on a surface of an integrated circuit substrate; defining an opening in the underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation; introducing a solder material to the exposed area of the contact pads; and after introducing the solder, removing the sacrificial material.

Ablation method and recipe for wafer level underfill material patterning and removal

This disclosure relates generally to generating a solder-on-die using a water-soluble resist, system, and method. Heat may be applied to solder as applied to a hole formed in a water-soluble resist coating, the water-soluble resist coating being on a surface of an initial assembly. The initial assembly may include an electronic component. The surface may be formed, at least in part, by an electrical terminal of the electronic component, the hole being aligned, at least in part, with the electrical terminal. The solder may be reflowed, wherein the solder couples, at least in part, with the electrical terminal.

Solder-on-die using water-soluble resist system and method

Growing community of inventors

Phoenix, AZ, United States of America

Edward Rudolph Prack