Globalfoundries Inc.

Edward Reis

Haiting Wang

Hui Zang

Hong Yu

Yi Qi

Zhenyu Hu

Yanping Shen

Hsien-Ching Lo

Wei Hong

Yongjun Shi

Hui Zhan

Ashish Kumar Jha

Charles Vanleuvan

A shallow trench isolation (STI) structure is formed from a conventional STI trench structure formed of first dielectric material extending into the substrate. The conventional STI structure undergoes further processing, including removing a first portion of the dielectric material and adjacent portions of the semiconductor substrate to create a first recess, and then removing another portion of the dielectric material to create a second recess in just the dielectric material. A nitride layer is formed above remaining dielectric material and on the sidewalls of the substrate. A second dielectric material is formed on the spacer layer and fills the remainder of first and second recesses. The nitride layer provides an 'inner spacer' between the first insulating material and the second insulating material and also separates the substrate from the second insulating material. An isotropic Fin reveal process is performed and the STI structure assists in equalizing fin heights and increasing active S/D region area/volume.

STI inner spacer to mitigate SDB loading

Methods form integrated circuit structures that include a semiconductor layer having at least one fin. At least three gate stacks contact, and are spaced along, the top of the fin. An insulator in trenches in the fin contacts the first and third of the gate stacks, and extends into the fin from the first and third gate stacks. Source and drain regions in the fin are adjacent a second of the gate stacks. The second gate stack is between the first and third gate stacks along the top of the fin. Additionally, a protective liner is in the trench between a top portion of the insulator a bottom portion of the insulator.

Finfet diffusion break having protective liner in fin insulator

Growing community of inventors

Ballston Spa, NY, United States of America

Edward Reis