Texas Instruments Corporation

Semiconductor Research Corporation

Edward Raymond Engbrecht

Stephan Grunow

Satyavolu Srinivas Papa Rao

Kurt H Junker

John G Ekerdt

Sameer Kumar Ajmera

Yang-Ming Sun

A device employs damascene layers with a pore sealing liner and includes a semiconductor body. A metal interconnect layer comprising a metal interconnect is formed over the semiconductor body. A dielectric layer is formed over the metal interconnect layer. A conductive trench feature and a conductive via feature are formed in the dielectric layer. A pore sealing liner is formed only along sidewall of the conductive via feature and along sidewalls and bottom surfaces of the conductive trench feature. The pore sealing liner is not substantially present along a bottom surface of the conductive via feature.

Integration of pore sealing liner into dual-damascene methods and devices

The present invention includes methods for forming a boron carbo-nitride layer. Additional embodiments include thermal chemical vapor deposition methods for forming a boron carbo-nitride layer. Also integrated circuit devices with a boron carbo-nitride layer are disclosed.

Methods of forming boron carbo-nitride layers for integrated circuit devices

Growing community of inventors

Austin, TX, United States of America

Edward Raymond Engbrecht