Rockwell International Corporation

United States of America As Represented by the Secretary of the Air Force

Edward R Gertner

Joseph T Longo

Austin M Andrews, Ii

John E Clarke

Charles R Younger

Kenneth L Hess

Stuart J Irvine

Shawn L Johnston

Richard C Eden

John G Pasko

Method and apparatus for vapor phase free methyl radical transport of indium dopant species for precise predetermined reproducible doping concentrations to control electrical properties for MOCVD grown materials.

Technique for doping mercury cadmium telluride MOCVD grown crystalline

Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials.

Technique for doping MOCVD grown crystalline materials using free

A method of making a junction in semiconductive materials to improve the spectral response of the junction in photovoltaic detectors. A first layer of semiconductive material is grown, by epitaxy technique, on a substrate of semiconductive material of the same conductivity type. Growth of the first layer is discontinued and the temperature is changed. Then a second layer of opposite conductivity type is grown on the first layer.

Liquid phase epitaxy method of growing a junction between two

A high speed infrared detector for use as a receiver in a 10.6.mu.m communication system and being composed of a Pb.sub.0.8 Sn.sub.0.2 Te crystalline substrate, a 10.6.mu.m absorbing layer on said substrate composed of a p-type Pb.sub.0.8 Sn.sub.0.2 Te material and a 10.6.mu.m transparent layer disposed on said first layer and composed of a Pb.sub.0.9 Sn.sub.0.1 Te n-type material.

High speed infrared detector

An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 .mu.m portion of the infrared spectrum and operable above 77.degree. K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.sub..90 Sn.sub..10 Te material on said substrate and a second active layer of a Pb.sub..80 Sn.sub..20 Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy.

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Thousand Oaks, CA, United States of America

Edward R Gertner