Gm Global Technolgoy Operations, Inc.

Other

Edward P Yankoski

Terence G Ward

Gregory S Smith

George John

James Michio Nagashima

George R Woody

Ghyrn E Loveness

Jonathan L Hall

Luke A Wilhelm

Abraham Bruno Caulk

David F Nelson

Zhongying Shi

Mujeeb I Ijaz

Kenneth S Smith

Brooks S Mann

Khiet Le

Energy storage systems, battery cells, and batteries of the present technology may include a heat exchanger or fluid delivery structure that may transfer heat from a battery cell or cell block to a heat exchange fluid. The heat exchanger or fluid delivery structure may substantially maintain an interfacial temperature during a temperature increase from the battery cell or cell block.

Directed quench systems and components

A subcomponent is provided for a power inverter module. The apparatus comprises a capacitor having a terminal and integrated into a housing. A substrate is mounted on the housing. The substrate incorporates a power semiconductor switch and has at least one direct current (DC) tab. The direct current tab is directly connected to the terminal of the capacitor.

Capacitor with direct DC connection to substrate

An automotive power converter is provided. The automotive power converter includes a substrate, first and second electronic devices on the substrate, at least one conductive member coupled to the substrate and having a first device portion electrically coupled to the first electronic device and a second device portion electrically coupled to the second electronic device, and first and second terminals electrically coupled to the at least one conductive member. When a power supply is coupled to the first and second terminals, current flows from the first terminal to the first device portion substantially in a first direction and from the second terminal to the second device portion substantially in a second direction. The first direction has a first component and the second direction has a second component opposing the first component.

Power module layout for automotive power converters

A semiconductor subassembly is provided for use in a switching module of an inverter circuit for a high power, alternating current motor application. The semiconductor subassembly includes a wafer having first and second opposed metallized faces; a semiconductor switching device electrically coupled to the first metallized face of the wafer and having at least one electrode region; and an interconnect bonded to the semiconductor switching device. The interconnect includes a first metal layer bonded to the at least one electrode region of the semiconductor switching device, a ceramic layer bonded to the first metal layer, the ceramic layer defining a via for accessing the first metal layer, a second metal layer bonded to the ceramic layer, and a conducting substance disposed in the via of the ceramic layer to electrically couple the first metal layer to the second metal layer.

Semiconductor subassemblies with interconnects and methods for manufacturing the same

Systems and apparatus are provided for power electronics substrates adapted for direct substrate cooling. A power electronics substrate comprises a first surface configured to have electrical circuitry disposed thereon, a second surface, and a plurality of physical features on the second surface. The physical features are configured to promote a turbulent boundary layer in a coolant impinged upon the second surface.

Power electronics substrate for direct substrate cooling

A power electronics power module is provided. The power electronics power module includes an electrically conductive substrate, a electronic die having first and second opposing surfaces and at least one transistor formed thereon, the electronic die being mounted to the electrically conductive substrate and the at least one transistor being configured such that when the at least one transistor is activated, current flows from the first surface of the electronic die into the electrically conductive substrate, and a control member at least partially imbedded in the electrically conductive substrate, the control member having a control conductor formed thereon and electrically connected to the at least one transistor such that when a control signal is provided to the control conductor, the at least one transistor is activated.

Power electronics power module with imbedded gate circuitry

A terminal assembly for a power converter is provided. The terminal assembly includes first and second conductive components and a current sensor. The first conductive component has first and second releasable attachment formations. The second conductive component has first and second portions with respective first and second widths. The first width is less than the second width. The first portion is releasably attached to the first conductive component with the second releasable attachment formation. The current sensor has an opening therethrough and is positioned between the first conductive component and the second portion of the second conductive component such that the first portion of the first conductive component extends through the opening. The current sensor is responsive to current flowing through the first portion of the second conductive component.

Compact terminal assembly for power converters

A stacked busbar assembly includes two or more busbar subassemblies, each including a plurality of busbars having one or more power semiconductor devices bonded thereto (e.g., IGBTs, power diodes, and the like). Each busbar has an internal integrated cooling system including one or more fluid channels in communication with an inlet and an outlet. The busbar assemblies are stacked such that their respective inlets and outlets are aligned and a coolant may then flow in parallel therethrough.

Stacked busbar assembly with integrated cooling

A cooling system is provided for controlling temperature in a power electronic device. The power electronic device includes a semiconductor having a major surface. The cooling system includes a temperature sensor coupled to the major surface of the semiconductor; and a control circuit coupled the temperature sensor. The control circuit is configured to reduce current to the inverter circuit when the temperature exceeds a predetermined temperature.

Temperature sensing arrangements for power electronic devices

A semiconductor device is provided, and includes a wafer having first and second opposed metallized major faces and a transistor bonded to the first metallized face of the wafer. The transistor includes a first surface, and the first surface defines a first area. The device further includes a first metal layer bonded to the first surface of the transistor. The first metal layer has a first surface that defines a second area larger than the first area of the transistor. The device further includes a ceramic layer bonded to the first surface of the first metal layer.

Semiconductor devices with layers having extended perimeters for improved cooling and methods for cooling semiconductor devices

A cooling system is provided for use in conjunction with a semiconductor assembly including a first semiconductor device and a second semiconductor device electrically coupled to the first semiconductor device by an elongated electrical connection. The cooling system includes a flow passage, a pump fluidly coupled to the flow passage, and an outlet array fluidly coupled to the flow passage and configured to direct a coolant fluid over the second semiconductor device. The outlet array has an interconnect feature formed therein configured to receive the elongated electrical connection there through.

Growing community of inventors

Corona, CA, United States of America

Edward P Yankoski