Raytheon Company

Edward P Smith

Justin Gordon Adams Wehner

Jamal I Mustafa

Borys Pawel Kolasa

Bradly Eachus

Paul M Alcorn

David R Rhiger

Michael J Batinica

Justin G A Wehner

Stephanie Bostwick

Anne Itsuno

A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.

Infrared detecting with multiple absorbers in a sensing element

A photo detector having a substrate and a first structure formed on the substrate. The first structure includes an emitter layer formed on the substrate and a base layer formed on the emitter layer. Further, the first structure includes a collector layer formed on the base layer. The collector layer has a plasmonic structure. The plasmonic structure includes a first plurality of mesa structures. Each of the mesa structures of the first plurality of mesa structures includes a second plurality of mesa structures having ridges arranged in a regularly repeating pattern.

Infrared photodetector architectures for high temperature operations

A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.

Focal plane array detectors with selectable polarization

A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.

Reduced junction area barrier-based photodetector

In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels.

Multi-band position sensitive imaging arrays

A photo-detector having a photonic crystal structure for absorbing photons passing perpendicular to a surface of the photo-detector and a plasmonic resonance structure for absorbing photons passing along the surface of the photo-detector.

Photo-detector having plasmonic resonance and photon crystal thermal noise suppression

Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector () includes a semiconductor absorber layer (A,B,) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer () coupled to the absorber layer (A,) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer () and having a first mirror () and a second mirror ().

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Santa Barbara, CA, United States of America

Edward P Smith