US Government As Represented by the Secretary of the Army

Edward M Yee

William A Gutierrez

Herbert L Wilson

A method of making transmission mode glass-sealed negative electron affinity (NEA) gallium arsenide (GaAs) photocathodes, utilizing germanium (Ge) as the seed crystal and multilayers of GaAs and gallium aluminum arsenide (GaAlAs) grown by metal alkyl-hydride vapor-phase epitaxy. The GaAs serves as the photoemitting layer and the GaAlAs serves as the passivating layer. The Ge, GaAs,GaAlAs combination is sealed to a glass support substrate which serves as the input window for the device. Finally, the Ge is removed and the GaAs is activated.

Method of making negative electron affinity photocathode

A method of fabricating high performance transmission mode negative elect affinity III-V compound photocathodes which eliminates recurrent liquid phase epitaxial growth surface defects and solves the 'wipe-off' problem incurred during the termination of the growth cycle.

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Alexandria, VA, United States of America

Edward M Yee