Tokyo Electron Limited

Edward L Sill

William Dale Jones

Craig T Baldwin

Thomas J Licata

Mirko Vukovic

Robert Clark Rowan, Jr

A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space for containing a substrate to be processed with a plasma formed within the chamber. A dielectric window interfaces with the processing chamber proximate the processing space. A core element formed of a material having a high magnetic permeability is positioned outside of the chamber proximate the dielectric window, and an electrically conductive element surrounds a portion of the core element of high magnetic permeability. The conductive element, when electrical current is conducted thereby, is operable for coupling a magnetic flux into the chamber through the dielectric window for affecting a plasma in the processing space. The core element is configured for directing a portion of the magnetic flux in a direction toward the dielectric window to efficiently couple the channeled flux into the processing chamber through the dielectric window.

Process apparatus and method for improving plasma production of an inductively coupled plasma

A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma and a substrate support. Electrodes are coupled to the substrate support and an RF power source is coupled to each of the electrodes for biasing the electrodes to create a DC bias on a substrate positioned on the supporting surface. A first comparator having first and second inputs is electrically coupled to one of the electrodes with an isolating device being coupled between the first and second inputs to isolate the first input from the bias on the one electrode. The comparator has an output reflective of a voltage difference between the first and second inputs. A second comparator has a first input coupled to the first electrode and a second input coupled to the second electrode, and has an output reflective of a voltage difference between the first and second inputs resulting from the bias difference between the first and second electrodes.

Method for monitoring substrate biasing during plasma processing of a substrate

A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma and a substrate support. Electrodes are coupled to the substrate support and an RF power source is coupled to each of the electrodes for biasing the electrodes to create a DC bias on a substrate positioned on the supporting surface. Multiple voltage measurement circuits are electrically coupled to the RF power source and the electrodes to measure voltages at multiple points. A precursor determines the DC bias levels of the electrodes based on the multiple measurement points.

Apparatus and method for measuring substrate biasing during plasma processing of a substrate

A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma, a substrate support within the chamber, and a plurality of electrodes coupled to the substrate support. The electrodes are each positioned proximate the supporting surface and are electrically isolated from one another. An RF power source is coupled to each of the electrodes for biasing the electrodes, so that they are operable for creating a DC bias on a substrate positioned on the supporting surface. A first electrically capacitive structure is electrically coupled between the RF power source and at least one of the plurality of electrodes. The first electrically capacitive structure has a variable capacitance for varying the DC bias created on the substrate by the at least one electrode relative to the DC bias created on the substrate by at least one of the other electrodes of the plurality of electrodes. The varied DC bias thereby varies the effect of a plasma on one portion of the substrate relative to the effect of the plasma on another portion of the substrate.

Apparatus and method for plasma processing of a substrate utilizing an electrostatic chuck

A processing system for processing a substrate comprises a process chamber having a top, a bottom, and a sidewall for defining a process space therein. The process chamber has an opening in the sidewall thereof for providing access to the process space. A plasma-generating assembly is coupled with the process chamber for creating a plasma within the process space. A substrate support assembly is configured for coupling with the process chamber to support a substrate within the process space. The substrate support assembly extends into the process space through the sidewall opening in the process chamber and seals the sidewall opening to generally isolate the process space from atmosphere.

Process apparatus and method for improved plasma processing of a substrate

Apparatus for monitoring substrate biasing during plasma processing of a substrate

A passive first-order band reject, or notch, filter characteristic is introduced into a supply and/or return line (,) of a heat transfer system (,) that uses electrically conductive liquid heat transfer medium in contact with radio frequency electrified components (,) typical in sputtering or etching manufacturing equipment. The heat transfer medium line (,) is coiled to create an inherent inductance (L,). A capacitive element (C,) is operatively connected across the coil (,) in the heat transfer medium line (,), the amount of capacitance chosen so that the resonant frequency is at the RF frequency of the components (,) being thermally conditioned. Thus, a high impedance is created for that frequency. The coil (,) and capacitor (C,) combination is protected from physical and electromagnetic interference by an enclosure (,).

Method and apparatus for radio frequency isolation of liquid heat transfer medium supply and discharge lines

A plasma etch apparatus (,) such as that for etching wafers in the manufacture of semiconductors includes a vacuum chamber (,) surrounded by a cylindrical dielectric wall (,). A coil (,) surrounds the chamber outside of the wall and is energized with medium frequency RF energy which is inductively coupled into the chamber to energize a plasma in the chamber to etch a semiconductor wafer (,) on a support (,) in the chamber. A generally cylindrical Faraday shield (,) surrounds the outside of the chamber in contact with the outside of the wall between the wall and the coil. The shield has a plurality of axially oriented slits (,) therein closely spaced around the shield and extending less than the height of the shield. One slit or gap (,) extends the full height of the shield and interrupts an otherwise continuous conductive path around the circumference of the chamber. The gap is about,inch wide, so that, upon initial energization of the coil, a momentary peak-to-peak RF voltage forms across the gap, which generates an electric field in the chamber in the vicinity of the gap which ignites the plasma.

Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma

A method for improving the efficiency of a plasma process such as a sputter process. A low partial pressure of a gas such as oxygen liberated from a substrate in a reaction chamber is maintained. The low partial pressure may be maintained by providing a plasma gas having a mass that is about equal to or greater than the liberated gas to the reaction chamber at a rate so that the steady state ratio of the plasma gas to the liberated gas is at least 1. The plasma gas is preferably argon. Alternatively a low partial pressure may be maintained by providing an in situ getter or a reactive, condensation or selective pump in the chamber. The method is applicable to a sputter etch or a sputter deposition process.

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Edward L Sill