International Business Machines Corporation

Edward Kobeda

Jeffrey P Gambino

Randhir Singh Malik

George G Gifford

Nickolas Joseph Mazzeo

Michael J Whitney

Paul Anthony Zulpa

John S Maresca

Katherine June Pearsall

Benjamin J Steele, Jr

Eric T Lambert

Gary L Patton

Robert D Hayes

Brent R Jensen

Whether a connector element electrically connected to a direct-current output of a converter that converts alternating current into direct current is connected to an external device may be detected. The converter may be disabled in response to the electrical connector component not being connected to the external device. In response to the electrical connector component being connected to the external device, the converter may be enabled.

Power-saving voltage converter operation

A voltage converter system having a converter and a connector system may include a control circuit that enables or disables the converter in response to the connection status of the connector system.

Power-saving voltage converter system

An exemplary embodiment of the invention relates to an integrated computer-based method and system for facilitating supplier qualification and quality management. This computer-based method and system includes a host system receiving a request from a user system to execute supplier qualification and quality management software, executing the requested software at the host system, sending results of the software execution to the user system, receiving input at the host system from the user system in response to the software execution, and providing the user system with output generated as a result of executing the software. The supplier qualification and quality management software includes a selection module, a qualification module and a quality module.

Method and system for providing an end-to-end business process for electronic supplier qualification and quality management

The present invention provides a method for fabricating tungsten local interconnections in high density CMOS circuits, and also provides high density CMOS circuits having local interconnections formed of tungsten. Pursuant to the method, an etch stop layer of chromium is initially deposited on the circuit elements of the CMOS silicon substrate. Next, a conductive layer of tungsten is non-selectively deposited on the chromium layer. A photoresist mask is then lithographically patterned over the tungsten layer. The tungsten layer is then etched down to, and stopping at, the chromium layer, after which the photoresist mask is stripped. The stripping preferably uses a low temperature plasma etch in O.sub.2 at a temperature of less than 100.degree. C. Finally, a directional O.sub.2 reactive ion etch is used to remove the chromium layer selectively to the silicon substrate. Borderless contacts are formed with the aid of the chromium etch stop layer beneath the tungsten local interconnection layer. The method of integration of this approach results in anisotropic metal lines patterned over topography using a standard photoresist mask. This approach also allows partial overlap of contacts to reduce device dimensions, and thereby results in improved density and performance.

Method for fabricating Tungsten local interconnections in high density

Method for fabricating tungsten local interconnections in high density

A method for fabricating bipolar and CMOS devices in integrated circuits using W as a local interconnect and via landing pad for bipolar and CMOS devices. The method includes the forming of an oxide/silicon bilayer above a local interconnect of tungsten/titanium wherein the oxide is patterned as a mask for the silicon/tungsten/titanium reactive ion etch, and the silicon layer above the tungsten/titanium layer is used as an etch stop for a via etch. The silicon layer is then reacted and converted to titanium silicide after the via etch to provide a low resistance path in the via from the local interconnect in a self aligned manner.

Method for fabricating bipolar and CMOS devices in integrated circuits

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Raleigh, NC, United States of America

Edward Kobeda