Axcelis Technologies, Inc.

Semequip, Inc.

Eaton Corporation

Other

Edward K McIntyre

Thomas N Horsky

Kourosh Saadatmand

Sami K Hahto

Richard David Goldberg

William Davis Lee

Michael A Graf

Jun Lu

Piero Sferlazzo

Donald N Polner

Richard M Cloutier

David Richard Swenson

Ernst F Scherer

William P Reynolds

Kevin Cook

William E Reynolds

Hans J Rutishauser

Paul A Loomis

Gerald L Dionne

Dennis Manning

Kevin W Wenzel

Richard Goldberg

Edward J Ladny

Donald E DeLuca

Nathaniel Robinson

William F Divergilio

Thang D Nguyen

An electrostatic clamp monitoring system has an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface associated therewith via one or more electrodes. A power supply is electrically coupled to the electrostatic clamp and configured to selectively supply a clamping voltage at a clamping frequency to the electrostatic clamp. A data acquisition system measures a current supplied to the one or more electrodes, and a controller integrates the measured current over time, therein determining a charge value associated a clamping force between the workpiece and electrostatic clamp. The controller is further configured to selectively vary one or more of the clamping voltage and clamping frequency based on the determined charge value, thereby maintaining a desired clamping force between the workpiece and electrostatic clamp.

Method to provide consistent electrostatic clamping through real time control of electrostatic charge deposition in an electrostatic chuck

An electrostatic clamp monitoring system has an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface via one or more electrodes. A power supply electrically coupled to the electrostatic clamp is configured to selectively supply a clamping voltage to the one or more electrodes. A data acquisition system is coupled to the power supply and configured to measure a current supplied to the one or more electrodes, therein defining a measured current. A controller integrates the measured current over time, therein determining a charge value associated a clamping force between the workpiece and electrostatic clamp. A memory stores the charge value associated with the clamping force over a plurality of clamping cycles, therein defining a plurality of charge values, and the controller determines a clamping capability of the electrostatic clamp based on a comparison of a currently determined charge value to the plurality of charge values.

Charge integration based electrostatic clamp health monitor

A system and method for clamping a workpiece to an electrostatic clamp (ESC) comprises placing a first workpiece on a surface of the ESC and applying a first set of clamping parameters to the ESC, therein clamping the first workpiece to the surface of the ESC with a first clamping force. A degree of clamping of the workpiece to the ESC is determined and the application of the first set of clamping parameters to the ESC is halted based on a process recipe. A second set of clamping parameters is applied to the ESC after halting the application of the first set of clamping parameters to the ESC, and the workpiece is removed from the surface of the ESC concurrent with the application of the second set of clamping parameters to the ESC when the degree of clamping of the workpiece to the ESC is less than or approximately equal to a threshold clamping value. The second set of clamping parameters to the ESC is further halted after removing the workpiece from the surface of the ESC.

System and method for electrostatic clamping of workpieces

An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.

External cathode ion source

The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.

Method for extending equipment uptime in ion implantation

A mass analysis magnet assembly ( ) is provided for use in an ion implanter ( ), comprising: (i) a magnet ( ) for mass analyzing an ion beam ( ) output by an ion source ( ), the magnet providing an interior region ( ) through which the ion beam passes; and (ii) at least one strike plate ( ) in part forming an outer boundary of the interior region ( ). The at least one strike plate is comprised of an isotopically pure carbon-based material. The isotopically pure carbon-based material, preferably by mass greater than 99% carbon C-12, prevents neutron radiation when impacted by deuterons extracted from the ion source ( ). The strike plate ( ) may comprise an upper layer ( ) of isotopically pure carbon C-12 isotope positioned atop a lower substrate ( ).

Mechanism for prevention of neutron radiation in ion implanter beamline

A variable aperture assembly (,) is provided for controlling the amount of ion beam current passing therethrough in an ion implantation system (,). The aperture assembly (,) comprises an aperture (,) defined by opposing first and second aperture plates (,A,,B) through which an ion beam passes; control arms (,A,,B) connected, respectively, to the first and second aperture plates (,A,,B); and an aperture drive mechanism (,) for simultaneously imparting movement to the control arms in opposite directions, to adjust a gap (,) between the aperture plates (,A,,B) to thereby control the amount of current passing through the aperture (,). Each of the opposite directions in which the control arms move is generally perpendicular to an axis along which the ion beam passes. A control system (,) is also provided for automatically adjusting the aperture gap (,) based on inputs representing actual ion beam current passing through the implanter, desired ion beam current, and aperture position. The control system (,) includes control logic (,) for receiving the inputs and outputting control signals (,) to the aperture drive mechanism to adjust the aperture gap.

Continuously variable aperture for high-energy ion implanter

An ion implanter including a time of flight energy measurement apparatus for measuring and controlling the energy of an ion beam includes an ion source for generating the ion beam, an ion acceleration assembly for accelerating the beam resulting in the beam comprising a series of ion pulses having a predetermined frequency and beam forming and directing structure for directing the ion beam at workpieces supported in an implantation chamber of the implanter. The time of flight energy measurement apparatus includes spaced apart first and second sensors, timing circuitry and conversion circuitry. The time of flight energy measurement apparatus measures an average kinetic energy of an ion included in a selected ion pulse of the ion beam. The first sensor and a second sensor are disposed adjacent the ion beam and spaced a predetermined distance apart, the second sensor being downstream of the first sensor. The first sensor generates a signal when an ion pulse of the ion beam passes the first sensor and the second sensor generates a signal when an ion pulse of the ion beam passes the second sensor. The timing circuitry of the energy measurement apparatus is electrically coupled to the first and second sensors and determines an elapsed time, t, for the selected ion pulse to traverse the predetermined distance between the first and second sensors. The timing circuitry calculates an average number of ion pulses, N, in the ion beam between the first and second sensors based on the approximation of the ion beam energy and calculates an offset time, t(offset), for the selected ion pulse using the formula, t(offset)=N.times.T. The timing circuitry than determines the elapsed time, t. The conversion circuitry converts the elapsed time, t, for the selected ion pulse into a measure of the energy of the ion beam.

Time of flight energy measurement apparatus for an ion beam implanter

An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducting an ionizable gas into the gas confinement chamber. A cathode is supported by the base and positioned with respect to said gas confinement chamber to emit ionizing electrons into the gas ionization zone. The cathode comprises a tubular conductive body that partially extends into the gas confinement chamber and includes a conductive cap that faces into the gas confinement chamber for emitting ionizing electrons into the gas confinement chamber. A filament is supported by the base at a position inside the tubular conductive body of the cathode for heating the cap and cause the ionizing electrons to be emitted from the cap into the gas confinement chamber.

Ion generating source for use in an ion implanter

Growing community of inventors

Franklin, MA, United States of America

Edward K McIntyre