International Business Machines Corporation

Other

Edward Jack Gordon

Mete Erturk

Douglas M Daley

Robert Mark Rassel

Donald Francis Canaperi

Eric Jeffrey White

Robert Allen Groves

Mahadevaiyer Krishnan

Michael F Lofaro

William J Cote

David S Collins

Kenneth M Davis

James Anthony Tornello

Scott Alan Estes

Michael T Brigham

Michael A Cobb

Michael Joseph MacDonald

James Hannah

Dean Allen Schaffer

George James Slusser

Methods of fabricating an on-chip capacitor with a variable capacitance, as well as methods of adjusting the capacitance of an on-chip capacitor and design structures for an on-chip capacitor. The method includes forming first and second ports configured to be powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. The method includes configuring the first voltage-controlled unit to selectively couple the first electrode with the first port, and the second voltage-controlled unit to selectively couple the second electrode with the second port. When the first electrode is coupled by the first voltage-controlled unit with the first port and the second electrode is coupled by the second voltage-controlled unit with the second port, the capacitance of the on-chip capacitor increases.

On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit

On-chip capacitors with a variable capacitance, as well as design structures for a radio frequency integrated circuit, and method of fabricating and method of tuning on-chip capacitors. The on-chip capacitor includes first and second ports powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. Each of the first and second voltage-controlled units is switched between a first state in which the first and second electrodes are electrically isolated from the first and second ports and a second state. When the first voltage-controlled unit is switched to the second state, the first electrode is electrically connected with the first port. When the second voltage-controlled unit is switched to the second state the second electrode is electrically connected with the second port. The on-chip capacitor has a larger capacitance value when the first and second voltage-controlled units are in the second state.

Back-end-of-line (BEOL) wiring structures that include an on-chip inductor and an on-chip capacitor, as well as design structures for a radiofrequency integrated circuit. The on-chip inductor and an on-chip capacitor, which are fabricated as conductive features in different metallization levels, are vertically aligned with each other. The on-chip capacitor, which is located between the on-chip inductor and the substrate, may serve as a Faraday shield for the on-chip inductor. Optionally, the BEOL wiring structure may include an optional Faraday shield located vertically either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the top surface of the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the electrodes of the on-chip capacitor to permit tuning, during circuit operation, of a resonance frequency of an LC resonator that further includes the on-chip inductor.

BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit

Methods for fabricating a back-end-of-line (BEOL) wiring structure that includes an on-chip inductor and an on-chip capacitor, as well as methods for tuning and fabricating a resonator that includes the on-chip inductor and on-chip capacitor. The fabrication methods generally include forming the on-chip capacitor and on-chip inductor in different metallization levels of the BEOL wiring structure and laterally positioned to be substantially vertical alignment. The on-chip capacitor may serve as a Faraday shield for the on-chip inductor. Optionally, a Faraday shield may be fabricated either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the directly-connected electrodes of the on-chip capacitor for tuning, during circuit operation, a resonance frequency of an LC resonator that further includes the on-chip inductor.

Methods of fabricating a BEOL wiring structure containing an on-chip inductor and an on-chip capacitor

Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes active circuitry on a substrate, a bond pad carried by the substrate, and a shielding structure disposed between the substrate and the bond pad. The shielding structure includes a plurality of electrically characterized devices configured to reduce noise transmission from the active circuitry to the bond pad.

Design structure incorporating semiconductor device structures that shield a bond pad from electrical noise

Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.

Slurry for mechanical polishing (CMP) of metals and use thereof

Sleeping mask

A needle threading device comprising a flashlight having a needle mounted on the side of the flashlight with the eye of the needle projecting above the lens of the flashlight. A magnifying glass has its handle mounted on the opposite side of the flashlight with the magnifying glass also extending above the lens of the flashlight. The axis of the magnifying glass coincides with the axis of the eye of the needle.

Needle threading device

Growing community of inventors

Bristol, VT, United States of America

Edward Jack Gordon