Novellus Systems Incorporated

Lam Research Corporation

Hanergy Holding Group Ltd.

Apollo Precision Beijing Limited

Edward J McInerney

Jeffrey C Benzing

Barry Lee Chin

Eliot K Broadbent

Christopher William Burkhart

Everhardus P Van De Ven

James C Wing

Shawn D Hancock

Thomas M Pratt

Michael N Susoeff

Lawrence C Lane

David Cohen

George D Kamian

Luc Albarede

Craig Lyle Stevens

Sooyun Joh

Yassine Kabouzi

Fred J Chetcuti

Johannes Vlcek

Cristian Siladie

Sassan Roham

Martin M Barrera

Dave Marquardt

A gas exhaust by-product measurement system is provided. A gas chamber is configured to receive exhaust from the exhaust output. A light source, light detector, and at least one optical element are positioned so that a light beam from the light source is directed to the at least one optical element a plurality of times before reaching the light detector. At least one heater provides heat to the at least one optical element. A plurality of purge gas nozzles are in fluid connection with the optical cavity. A high flow line is in fluid connection between a purge gas source and the plurality of purge gas nozzles. A low flow line is in fluid connection between the purge gas source and the plurality of purge gas nozzles. At least one flow controller manages a plurality of flow rates including a high flow and a low flow.

Gas exhaust by-product measurement system

A magnetron include a center plurality of magnets and an outer plurality of magnets arranged around the center plurality of magnets in a shape of two long sections and two shorter turnaround sections. The outer plurality of magnets are configured with at least one region of weaker magnetic field strength in at least one of the two long sections and adjacent to one of the two turnaround sections.

Magnetron with gradually increasing magnetic field out of turnarounds

A powder spray nozzle includes an inlet portion having an inlet diameter and an inlet length and an outlet portion having outlet diameter and an outlet length. The nozzle also includes an interface region between the inlet portion and the outlet portion having an interface diameter. A ratio of the inlet diameter to the inlet length is in a range of about 0.15 to 0.5.

Cold spray system nozzle

An assembly for a chemical-mechanical polishing process includes a platen having an outer edge, a top surface, and at least one inlet for introducing fluid to the top surface; a manifold system, entrenched in the top surface and in communication with the at least one inlet, for channeling the fluid about the top surface; a polishing pad having a top pad surface, and a plurality of fluid delivery through-holes for introducing the fluid from the manifold system to the top pad surface; and a fluid distribution system, entrenched in the top pad surface and in communication with the through-holes, for substantially uniformly distributing the fluid about the top pad surface. The fluid distribution system includes a set of intersecting first grooves defining an array of lands, each of the first grooves having a first cross sectional area. The fluid distribution system also includes a plurality of second grooves disposed within each of the lands and communicating with the first grooves, each of the second grooves having a second cross sectional area that is smaller than the first cross sectional area.

Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device

Bowing of semiconductor wafers during heating is reduced by heating the wafers in a gas with a thermal conductivity and mean free path greater than that of oxygen, or by heating the wafers in a processing chamber under a pressure less than 0.1 Torr. In one embodiment, the high thermal conductivity gas is helium and heating in the helium takes place at a pressure less than 2.4 Torr.

Method of semiconductor wafer heating to prevent bowing

A processing chamber with a showerhead and a chuck is cleaned using an injection of a gaseous cleaning agent through an aperture in the chuck into the processing chamber. Because the aperture is located directly under the showerhead, a portion of the gaseous cleaning agent passes through the face plate of the showerhead so that the inside of the showerhead may be cleaned as well. By applying a radio frequency power supply between the chuck and the showerhead, for example, by a coil located between the chuck and showerhead or applying the power directly to the chuck and the showerhead, the gaseous cleaning agent forms a plasma. Thus, the portion of the gaseous cleaning agent that passes through the face plate and into the showerhead is a plasma. The plasma is pumped out of the chamber through a pumping port so that the plasma continuously flows through the processing chamber.

Situ plasma clean gas injection

A multi-station processing chamber in which incompatible processes are performed includes multiple pedestals positioned in wells with annular gaps around the pedestals. Showerheads located above the pedestals flow reactive gases over substrates located on the pedestals. The reactive gases are drawn through the annular gaps by a pressure gradient. The reactive gases are then pumped out of the wells through an exhaust port. The narrow annular gap permits little recirculation of the reactive gases one they are drawn into the wells. Moreover, the showerheads are flush with ceiling of the chamber and the wells contain smooth contours to minimize dead space in the chamber thereby reducing residence time of the reactive gases. An indexing plate is used to lift the substrates off the pedestals and to accurately position the substrates at the next processing station. In one embodiment a purge plate located on the ceiling of the chamber between the showerheads flows an inert gas, such as argon, to further assist in maintaining a separation between the reactive gases. Thus, while one process, such as a silane initiation is performed at one station, other stations may contemporaneously perform an incompatible process, such as a tungsten hexafluoride-silane nucleation process and hydrogen reduction, thereby increasing throughput.

Isolation of incompatible processes in a multi-station processing chamber

In situ plasma clean gas injection

A multi-station processing chamber in which incompatible processes are performed includes multiple pedestals positioned in wells with annular gaps around the pedestals. Showerheads located above the pedestals flow reactive gases over substrates located on the pedestals. The reactive gases are drawn through the annular gaps by a pressure gradient. The reactive gases are then pumped out of the wells through an exhaust port. The narrow annular gap permits little recirculation of the reactive gases once they are drawn into the wells. Moreover, the showerheads are flush with ceiling of the chamber and the wells contain smooth contours to minimize dead space in the chamber thereby reducing residence time of the reactive gases. An indexing plate is used to lift the substrates off the pedestals and to accurately position the substrates at the next processing station. In one embodiment a purge plate located on the ceiling of the chamber between the showerheads flows an inert gas, such as argon, to further assist in maintaining a separation between the reactive gases. Thus, while one process, such as a silane initiation is performed at one station, other stations may contemporaneously perform an incompatible process, such as a tungsten hexafluoride--silane nucleation process and hydrogen reduction, thereby increasing throughput.

A cyclone evaporator includes an evaporator body with an evaporation chamber therein. The evaporation chamber preferably includes a thermally conductive sidewall having a generally cylindrical upper portion and a downwardly tapered lower portion. The evaporator body further includes a cover having a vapor outlet opening into the evaporation chamber and an outlet tube. The outlet tube circumscribes the vapor outlet and extends into a lower portion of the evaporation chamber. A liquid precursor passage and a carrier gas passage extend through the evaporator body and open into the evaporation chamber. In one embodiment, the carrier gas passage is positioned to direct carrier gas parallel to liquid precursor flow and intersect the liquid precursor at a liquid precursor passage outlet within the evaporation chamber. In another embodiment, the carrier gas passage is positioned to direct carrier gas across an outlet of liquid precursor passage. In both embodiments, the carrier gas facilitates atomization of the liquid precursor and flows cyclonically to distribute the atomized liquid precursor within the evaporation chamber. The liquid precursor deposits on the thermally conductive evaporation chamber wall and evaporates to form a gas precursor. The gas precursor flows with the carrier gas and exits the cyclone evaporator through the outlet tube and the vapor outlet. The cyclone evaporator is particularly advantageous for evaporating low vapor pressure liquids useful in semiconductor fabrication processes such as chemical vapor deposition.

Process of evaporating a liquid in a cyclone evaporator

A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemicalvapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

Apparatus for preventing deposition on frontside peripheral region and

A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

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San Jose, CA, United States of America

Edward J McInerney