Globalfoundries Inc.

Globalfoundries U.S. Inc.

Edward J Gordon

Frank Wilhelm Mont

Mete Erturk

Won Suk Lee

Alexander Lee Martin

Douglas M Daley

Tung-Hsing Lee

Anvitha Shampur

Teng-Yin Lin

Asmaa Elkadi

The present disclosure relates to semiconductor structures and, more particularly, to dummy fill structures and methods of manufacture. The structure includes: a passive device formed in interlevel dielectric material; and a plurality of metal dummy fill structures composed of at least one main branch and two extending legs from at least one side of the main branch, the at least two extending legs being positioned and structured to suppress eddy currents of the passive device.

Dummy fill structures

Methods of fabricating an on-chip capacitor with a variable capacitance, as well as methods of adjusting the capacitance of an on-chip capacitor and design structures for an on-chip capacitor. The method includes forming first and second ports configured to be powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. The method includes configuring the first voltage-controlled unit to selectively couple the first electrode with the first port, and the second voltage-controlled unit to selectively couple the second electrode with the second port. When the first electrode is coupled by the first voltage-controlled unit with the first port and the second electrode is coupled by the second voltage-controlled unit with the second port, the capacitance of the on-chip capacitor increases.

On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit

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Hinesburg, VT, United States of America

Edward J Gordon