Blackberry Corporation

Nxp Usa, Inc.

Edward Horne

Marina Zelner

Andrew Vladimir Claude Cervin

James Oakes

William E McKinzie, Iii

Matthew Russell Greene

James H Martin

Daniel Charles Boire

Andrew Vladimir Cervin

A process that incorporates teachings of the subject disclosure may include, for example, providing a first silicon dioxide layer on the silicon substrate, depositing a modifier layer on the first silicon dioxide layer, depositing a second silicon dioxide layer on the modifier layer to form a multilayer initial oxide and annealing the multilayer initial oxide resulting in an annealed multilayer initial oxide. The annealing causes diffusion of modifier species from the modifier layer into the first and second silicon dioxide layers and results in amorphous polysilicates. The first and second silicon dioxide layers have thicknesses that prevent the diffusion of the modifier species from reaching top and bottom interfaces of the annealed multilayer initial oxide. Other embodiments are disclosed.

Method and apparatus for compensating for high Thermal Expansion Coefficient mismatch of a stacked device

A device that incorporates teachings of the subject disclosure may include, for example, a multilayer initial oxide on a silicon substrate, where the multilayer initial oxide comprises amorphous polysilicates and a group one metal or a group two metal; a first electrode layer on the multilayer initial oxide; a dielectric layer on the first electrode layer; a second electrode layer on the dielectric layer, where an edge alignment spacing between at least one pair of corresponding electrode edges of two electrode layers of the capacitor is two microns or less; and connections for the first and second electrode layers. Other embodiments are disclosed.

Method and apparatus for compensating for high thermal expansion coefficient mismatch of a stacked device

A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion layer; a dielectric layer on the first electrode layer; and a second electrode layer on the dielectric layer. Other embodiments are disclosed.

Method and apparatus for a thin film dielectric stack

A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor having a substrate, a first electrode layer on the substrate, a first dielectric layer on the first electrode layer where the first dielectric layer has a columnar-oriented grain structure, a group of second dielectric layers stacked on the first dielectric layer where each of the group of second dielectric layers has a randomly-oriented grain structure, and a second electrode layer on the group of second dielectric layers. Other embodiments are disclosed.

A system that incorporates teachings of the present disclosure may include, for example, a first solid electrode, a second electrode separated into subsections, and a dielectric medium separating the subsections from the first solid electrode, where the subsections of the second electrode include a first group of subsections and a second group of subsections, where the first group of subsections are connectable with a first terminal for receiving an input signal, and where the second group of subsections is connectable with a second terminal for providing an output signal. Other embodiments are disclosed.

Thin films capacitors

A system that incorporates teachings of the subject disclosure may include, for example, a plurality of variable capacitors, a first set of resistors for applying a bias voltage to each variable capacitor of the plurality of capacitors, and a second set of resistors for providing a DC ground to each variable capacitor of the plurality of capacitors. The system can include one or more of multiple bias points, anti-parallel diodes, a choke inductor or a ground inductor. Other embodiments are disclosed.

Growing community of inventors

Burlington, Canada

Edward Horne