General Electric Company

Edward G Tefft

Richard W Kennedy

Y S Sun

Bernard R Tuft

William W Sheng

A method for forming low stress recesses in bodies of semiconductor material involves damaging the body either thermally or mechanically in the area where the recess is to be formed followed by etching in either a plasma or chemical medium to remove the damaged body portion leaving a relatively stress-free slot or other recess. Such recesses are utilized as diffusion sites for rapid formation of diffusion regions through semiconductor wafers and for the subdivision of wafers into discrete devices.

Fast isolation diffusion

Disclosed is a rectifier pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of rectifier pellets, and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused through the openings into a preselected distribution to reduce turnoff time. Grooves are etched to facilitate glass passivation and division of the wafer into pellets.

Glass passivated gold diffused rectifier pellet and method for making

The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the boundaries between conducting portions and between the gate and the conducting portions.

Selective irradiation of thyristors

Producing glass passivated gold diffused rectifier pellets

Disclosed is a bidirectional triode thyristor pellet that comprises two current conductive regions and a gate region. Gold is diffused into the boundaries between the several regions to inhibit carrier migration thereacross and thus reduce turnoff time. Also disclosed is a method of fabricating the subject thyristor pellet that permits glass passivation thereof if desired.

Triac with gold diffused boundary

Disclosed is an SCR pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of SCR pellets and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused through the openings into a preselected distribution in the base region to reduce turnoff time. Grooves are etched to facilitate glass passivation and division of the wafer into pellets.

Growing community of inventors

Auburn, NY, United States of America

Edward G Tefft