Texas Instruments Corporation

Raytheon Company

Other

L-3 Communications Corporation

Raytheon Ti Systems, Inc.

Edward G Meissner

Charles M Hanson

Robert A Owen

Steven N Frank

William K Walker

Gail D Shelton

Howard R Beratan

Robert J Kyle

James F Belcher

Roland W Gooch

Thomas R Schimert

Athanasios John Syllaios

Paul O Johnson

James E Robinson

Adam M Kennedy

Kevin N Sweetser

Robert K Dodds

David VanLue

Michael C Bailey

Mary E Cronin

Steven E Frank

A method for manufacturing optically-transparent lids includes etching sub-wavelength structures on a surface of a lid wafer. The structures may be arrayed in a hexagonally closed-packed pattern.

Sub-wavelength structures for reduction of reflective properties

A radiation detector () has a base (), a frame (), a window (), and solder layers () formed from a solder pre-form () to define a vacuum chamber (). Feedthroughs () penetrate the base () for electrical connection to internal components. A method for sealing the detector () aligns a lower detector assembly (), the frame () the window (), and the solder pre-forms () in a non-sealed relation within a processing chamber (). High temperature and low pressure is imposed, and the getter () is activated by resistive heating imposed by current leads (). The window (), frame (), and lower detector assembly () are then pressed together and sealed by the liquefied solder pre-forms (). The method eliminates the need for a seal port, combines several steps within the processing chamber (), and eliminates certain prior art cleaning steps.

Integrated package design and method for a radiation sensing device

A package (10, 60, 80) has a chamber (24) containing an integrated circuit (13) which detects infrared radiation. The package has on one side of the integrated circuit a portion (23) transparent to infrared radiation, and has on the opposite side of the integrated circuit a first part (12) which supports the integrated circuit. A second part (36) of the package is spaced from the first part (12) on the side thereof opposite from the integrated circuit. Thermoelectric cooling elements (51) are provided between and are thermally coupled to the first and second parts. Electrically conductive further elements (44) are also disposed between the first and second parts. A first arrangement (32, 29, 17, 18) electrically couples a terminal on the integrated circuit to a first end of the further element. A second arrangement (41, 38) electrically couples each further element to a respective pad (42) disposed on the side of the second part opposite from the first part. Some of the thermoelectric cooling elements may have one cross-sectional shape, others may have a different cross-sectional shape, and the further elements may have still another cross-sectional shape.

Integrated circuit package having a thermoelectric cooling element

A thermal imaging system (10) for providing an image representative of an amount of thermal radiation incident to the system is provided. The system (10) includes a thermal detector (28 or 30) made from a layer of temperature sensitive material forming a first element of a signal-producing circuit (54). The first element (28 or 30) has either a resistance or capacitance value depending on its temperature. The system (10) also includes an integrated circuit substrate (32) having a second element (56 or 58) of the signal-producing circuit (54) complementary and electrically coupled to the first element (28 or 30). The signal-producing circuit (54) may produce an output signal having a amplitude. The amplitude of the output signal is monitored as representing an absolute temperature of the detector (28 or 30) so as to determine the amount of thermal energy incident to the system (10).

Thermal detector and method

A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).

Method of fabricating focal plane array

A hybrid thermal detector and method for producing same where the optical coating 32 of the hybrid thermal detector has elongated parallel thermal isolation stots 62 along one axis. The elongated parallel slots 62 improve the acuity, or MTF of the resultant image produced by the detector along one axis. The optical coating 32 may be corrugated, or elevated, in order to add structural support and allow mechanical compliance along the axis of the slots.

Thermal crosstalk reduction for infrared detectors with common electrodes

A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlaying contact pad (104). An anistropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.

Thermal isolation of hybrid thermal detectors through an anisotropic etch

A thermal imaging system (10) for providing an image representative of an amount of thermal radiation incident to the system is provided. The system (10) includes a thermal detector (28 or 30) made from a layer of temperature sensitive material forming a first element of a signal-producing circuit (54). The first element (28 or 30) has either a resistance or capacitance value depending on its temperature. The system (10) also includes an integrated circuit substrate (32) having a second element (56, 58, 62, or 64) of the signal-producing circuit (54) complementary and electrically coupled to the first element (28 or 30). The signal-producing circuit (54) may produce an output signal having a frequency. The frequency of the output signal is monitored as representing an absolute temperature of the detector (28 or 30) so as to determine the amount of thermal energy incident to the system (10).

A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlying contact pad (104). An anisotropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.

Thermal detector apparatus and method using reduced thermal capacity

A thermal detection system (100, 200) includes a focal plane array (102, 202), a thermal isolation structure (104, 204) and an integrated circuit substrate (106, 206). The focal plane array (102, 202) includes thermal sensors (114, 214) formed from a pyroelectric element (116, 216), such as barium strontium titanate (BST). One side of the pyroelectric element (116, 216) is coupled to a contact pad (110, 210) disposed on the integrated circuit substrate (106, 206) through a mesa strip conductor (112, 212) of the thermal isolation structure (104, 204). The other side of the pyroelectric element (116, 216) is coupled to a common electrode (120, 220). In one embodiment, slots (128) are formed in the common electrode (120) intermediate the thermal sensors (114) to improve inter-pixel thermal isolation. In another embodiment, slots (236) are formed in the optical coating (224) to improve inter-pixel thermal isolation. The common electrode (120, 220) may be formed from a thermally insulating material, such as a silicon monoxide and chromium matrix (cermet) or other metal oxide.

Inter-pixel thermal isolation for hybrid thermal detectors

A mesa (31) is formed from polyimide (or a similar polymer material) to achieve a high thermal resistance. In an exemplary thermal imaging application, an array of thermal isolation mesa structures (30) are disposed on an integrated circuit substrate (20) for electrically connecting and bonding a corresponding focal plane array (5) of thermal sensors (10). Each mesa structure (30) includes a polyimide mesa (31) over which is formed a metal conductor (32) that extends from the top of the mesa down a mesa sidewall to an adjacent IC contact pad (22). When the focal plane array (5) is bonded to the corresponding array of thermal isolation mesa structure (30), a thermally isolated, but electrically conductive path is provided between the sensor signal electrode (16) of the thermal sensor (10) and the corresponding contact pad (22) of the integrated circuit substrate (20).

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Dallas, TX, United States of America

Edward G Meissner