National Semiconductor Corporation

Edward F Pressley

Alexei Sadovnikov

Richard Wendell Foote, Jr

Joseph Anthony DeSantis

Christoher J Knorr

An improved method for manufacturing bipolar transistors is disclosed. The method for forming a PNP transistor comprises the steps of forming a P type collector on a substrate, forming a PNP epitaxial base on the P type collector, forming a PNP extrinsic base in the PNP epitaxial base, and forming a PNP emitter in contact with the PNP extrinsic base. The method for forming an NPN transistor comprises the steps of forming an N type collector on a substrate, forming a NPN epitaxial base on the N type collector, forming an NPN extrinsic base in the NPN epitaxial base, and forming an NPN emitter in contact with the NPN extrinsic base. The PNP and NPN transistors may be manufactured in the same control flow process.

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Arlington, TX, United States of America

Edward F Pressley