Hewlett-packard Development Company, L.p.

Edward Enciso

Eric T Martin

Stanley J Wang

Sadiq Bengali

S Jonathan Wang

John Chen

James Weaver

Tom Cooney

High-voltage CMOS devices and low-voltage CMOS devices are integrated on a common substrate by forming a sacrificial film over at least active device areas, lithographically defining device active regions of the high-voltage CMOS devices, implanting dopants selectively through the sacrificial film into the lithographically defined device active regions of the high-voltage CMOS devices, diffusing the implanted dopants, removing the sacrificial film, and subsequently forming low-voltage CMOS devices.

Integrating high-voltage CMOS devices with low-voltage CMOS

A method includes a row precharge voltage applied to a node and a column voltage that is set. A row enable signal is pulsed to a switching device coupled between the node and the column voltage to cause the node voltage to be lowered to a desired level.

Method and apparatus for driver circuit to provide a desired voltage level to a device

An embodiment includes a first semiconductor element coupled between a precharge signal and a node, the first semiconductor element to allow current to flow from the precharge signal to the node when a positive voltage is present on the precharge signal, and a switching device coupled between the node and a voltage signal, the switching device to allow current flow between the node and the voltage signal when an enable signal is asserted.

Method and apparatus for driver circuit in a MEMS device

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Corvallis, OR, United States of America

Edward Enciso