International Business Machines Corporation

Edward D Adams

Arne Watson Ballantine

Alain F Loiseau

James Albert Slinkman

Richard Steven Kontra

Evgeni Petrovich Gousev

James Spiros Nakos

Joseph Francis Shepard, Jr

Jay Sanford Burnham

Nicholas Mone, Jr

Donald Walter Rakowski

Richard S Ray

Heather Elizabeth Preuss

Edward P Lowe, Jr

A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900&#xb0; C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900&#xb0; C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.

Method of fabricating a nitrided silicon oxide gate dielectric layer

An apparatus for the in-situ detection of ions in a beam of an ion implanter device includes a mass spectrometer device having inner and outer walls and, a system for generating and directing an ion implant beam through the mass spectrometer device. The mass spectrometer device generates a magnetic field for directing ions of the ion implant beam of a desirable type through an aperture for implanting into a semiconductor wafer, and causing ions of undesirable type to collide with the inner or outer wall. For in-situ detection, a detector device is disposed on the inner and outer walls of the mass spectrometer for detecting the undesirable type of ions deflected. In one embodiment, the detector device comprises electronic sensor devices for detecting a concentration of the undesirable type ions which comprise undesirable elements and compounds. In another embodiment, the detector device comprises Faraday cup devices for detecting a concentration of ions of the undesirable type, or, may comprise a moving Faraday device positioned along tracks disposed respectively along the inner and outer wall, the Faraday being driven for reciprocal movement along a respective track. Data is collected from the sensors corresponding to the positions of undesirable ion detection and is processed, in real-time, during wafer processing. In this manner potential contaminants in the ion implant beam may be determined and corrective action may be taken in response.

Ion implanter in-situ mass spectrometer

A method is presented for measuring and monitoring the mechanical stress at the device level which occurs intrinsically during the fabrication process or which is induced via extrinsic means. The method applies the fact that the current-voltage (I-V) characteristics of a diode change as the diode is subjected to mechanical stress. The method is applicable to monitoring stress at the microscopic and device levels at various stages in the semiconductor wafer fabrication process. Apparatus for implementing the method is also presented.

In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer

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Richmond, VT, United States of America

Edward D Adams